发明授权
- 专利标题： Method for copper surface smoothing
- 专利标题（中）： 铜表面平滑方法
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申请号： US10422443申请日： 2003-04-24
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公开(公告)号： US07091126B2公开(公告)日： 2006-08-15
- 发明人: Han-Hsin Kuo , Hung-Wen Su , Wen-Chih Chiou , Tsu Shih , Hsien-Ming Lee
- 申请人： Han-Hsin Kuo , Hung-Wen Su , Wen-Chih Chiou , Tsu Shih , Hsien-Ming Lee
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
An improvement in a copper damascene process is disclosed. The improvement comprises the step of projecting an electron beam on to a chemical mechanically polished material surface having copper filled etched trenches at a known angle of incidence with respect to the material surface for a known period of time, the electron beam having a beamwidth substantially covering the material surface and a known intensity.
公开/授权文献
- US20040214441A1 Method for copper surface smoothing 公开/授权日：2004-10-28
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