- 专利标题： High-temperature superconducting device and manufacturing method thereof
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申请号： US10809924申请日： 2004-03-26
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公开(公告)号： US07091515B2公开(公告)日： 2006-08-15
- 发明人: Masahiro Horibe , Hideo Suzuki , Yoshihiro Ishimaru , Hironori Wakana , Keiichi Tanabe
- 申请人： Masahiro Horibe , Hideo Suzuki , Yoshihiro Ishimaru , Hironori Wakana , Keiichi Tanabe
- 申请人地址： JP Kawasaki JP Tokyo
- 专利权人： Fujitsu Limited,International Superconductivity Technology Center, The Juridical Foundation
- 当前专利权人： Fujitsu Limited,International Superconductivity Technology Center, The Juridical Foundation
- 当前专利权人地址： JP Kawasaki JP Tokyo
- 代理机构： Armstrong, Kratz, Quintos, Hanson & Brooks, LLP.
- 优先权： JP2003-089776 20030328
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
At least two ramp-edge-structure Josephson junctions having different critical current densities to one another are provided on a substrate.