公开(公告)号：US07091515B2

公开(公告)日：2006-08-15

申请号：US10809924

申请日：2004-03-26

申请人： Masahiro Horibe ,  Hideo Suzuki ,  Yoshihiro Ishimaru ,  Hironori Wakana ,  Keiichi Tanabe

发明人： Masahiro Horibe ,  Hideo Suzuki ,  Yoshihiro Ishimaru ,  Hironori Wakana ,  Keiichi Tanabe

IPC分类号： H01L29/06

CPC分类号： H01L27/18 ,  H01L39/2496

摘要： At least two ramp-edge-structure Josephson junctions having different critical current densities to one another are provided on a substrate.

公开(公告)号：US20060247131A1

公开(公告)日：2006-11-02

申请号：US11331179

申请日：2006-01-13

申请人： Masahiro Horibe ,  Hideo Suzuki ,  Yoshihiro Ishimaru ,  Hironori Wakana ,  Keiichi Tanabe

发明人： Masahiro Horibe ,  Hideo Suzuki ,  Yoshihiro Ishimaru ,  Hironori Wakana ,  Keiichi Tanabe

IPC分类号： H01L39/22 ,  H01L29/06

CPC分类号： H01L27/18 ,  H01L39/2496

摘要： At least two ramp-edge-structure Josephson junctions having different critical current densities to one another are provided on a substrate.

摘要翻译： 在衬底上提供具有彼此具有不同临界电流密度的至少两个斜坡边缘结构约瑟夫逊结。

公开(公告)号：US06790675B2

公开(公告)日：2004-09-14

申请号：US10391412

申请日：2003-03-18

申请人： Seiji Adachi ,  Hironori Wakana ,  Yoshihiro Ishimaru ,  Masahiro Horibe ,  Osami Horibe ,  Yoshinobu Tarutani ,  Keiichi Tanabe

发明人： Seiji Adachi ,  Hironori Wakana ,  Yoshihiro Ishimaru ,  Masahiro Horibe ,  Osami Horibe ,  Yoshinobu Tarutani ,  Keiichi Tanabe

IPC分类号： H01L2100

CPC分类号： H01L39/2496 ,  Y10T29/49014

摘要： A method of fabricating a Josephson device includes the steps of forming a first superconducting layer and forming a second superconducting layer to form a Josephson junction therebetween, wherein the step of forming the second superconducting layer includes the steps of conducting a first step of forming the second superconducting layer with improved uniformity and conducting a second step of forming the second superconducting layer on the second superconducting layer formed in the first step with improved film quality.

摘要翻译： 一种制造约瑟夫逊器件的方法包括以下步骤：形成第一超导层并形成第二超导层以在其间形成约瑟夫逊结，其中形成第二超导层的步骤包括以下步骤：进行形成第二超导层的第二步骤 超导层，并且在第一步骤中形成的第二超导层上形成第二超导层并且改善膜质量的第二步骤。

公开(公告)号：US08330145B2

公开(公告)日：2012-12-11

申请号：US12549537

申请日：2009-08-28

申请人： Hironori Wakana ,  Koji Tsubone ,  Yoshinobu Tarutani ,  Yoshihiro Ishimaru ,  Keiichi Tanabe

发明人： Hironori Wakana ,  Koji Tsubone ,  Yoshinobu Tarutani ,  Yoshihiro Ishimaru ,  Keiichi Tanabe

IPC分类号： H01L27/18

CPC分类号： H01L39/225 ,  H01L27/18 ,  H03K19/195

摘要： A superconducting junction element has a lower electrode formed by a superconductor layer, a barrier layer provided on a portion of a surface of the lower electrode, an upper electrode formed by a superconductor and covering the barrier layer, and a superconducting junction formed by the lower electrode, the barrier layer and the upper electrode. A critical current density of the superconducting junction is controlled based on an area of the lower electrode.

摘要翻译： 超导接合元件具有由超导体层形成的下部电极，设置在下部电极的表面的一部分上的阻挡层，由超导体形成并覆盖阻挡层的上部电极以及由下部电极形成的超导结 电极，阻挡层和上电极。 基于下电极的面积来控制超导结的临界电流密度。

公开(公告)号：US20070158791A1

公开(公告)日：2007-07-12

申请号：US11584050

申请日：2006-10-20

申请人： Hironori Wakana ,  Koji Tsubone ,  Yoshinobu Tarutani ,  Yoshihiro Ishimaru ,  Keiichi Tanabe

发明人： Hironori Wakana ,  Koji Tsubone ,  Yoshinobu Tarutani ,  Yoshihiro Ishimaru ,  Keiichi Tanabe

IPC分类号： H01L23/552

CPC分类号： H01L39/225 ,  H01L27/18 ,  H03K19/195

摘要： A superconducting junction element has a lower electrode formed by a superconductor layer, a barrier layer provided on a portion of a surface of the lower electrode, an upper electrode formed by a superconductor and covering the barrier layer, and a superconducting junction formed by the lower electrode, the barrier layer and the upper electrode. A critical current density of the superconducting junction is controlled based on an area of the lower electrode.

摘要翻译： 超导接合元件具有由超导体层形成的下部电极，设置在下部电极的表面的一部分上的阻挡层，由超导体形成并覆盖阻挡层的上部电极以及由下部电极形成的超导结 电极，阻挡层和上电极。 基于下电极的面积来控制超导结的临界电流密度。

公开(公告)号：US20080051292A1

公开(公告)日：2008-02-28

申请号：US11895256

申请日：2007-08-23

申请人： Hironori Wakana ,  Seiji Adachi ,  Koji Tsubone ,  Keiichi Tanabe

发明人： Hironori Wakana ,  Seiji Adachi ,  Koji Tsubone ,  Keiichi Tanabe

IPC分类号： H01L39/22

CPC分类号： H01L39/225 ,  H01L39/2496 ,  Y10S505/702

摘要： A Josephson device includes a first superconducting electrode layer, a barrier layer and a second superconducting electrode layer that are successively stacked. The first and second superconducting electrode layers are made of an oxide superconductor material having (RE)1(AE)2Cu3Oy as a main component, where an element RE is at least one element selected from a group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, and an element AE is at least one element selected from a group consisting of Ba, Sr and Ca. The barrier layer is made of a material that includes the element RE, the element AE, Cu and oxygen, where in cations within the material forming the barrier layer, a Cu content is in a range of 35 At. % to 55 At. % and an RE content is in a range of 12 At. % to 30 At. %, and the barrier layer has a composition different from compositions of the first and second superconducting electrode layers.

摘要翻译： 约瑟夫逊装置包括依次堆叠的第一超导电极层，阻挡层和第二超导电极层。 第一和第二超导电极层由具有（RE）1（AE）2 Cu 3 O 3的氧化物超导体材料制成， 其中元素RE为选自Y，La，Pr，Nd，Sm，Eu，Gd，Dy，Ho，Er，Tm，Yb和Lu中的至少一种元素 元素AE为选自Ba，Sr和Ca中的至少一种元素。 阻挡层由包括元素RE，元素AE，Cu和氧的材料制成，其中在形成阻挡层的材料内的阳离子中Cu含量在35Aa的范围内。 ％至55 At。 ％，RE含量在12 At范围内。 ％至30 At。 ％，并且阻挡层具有与第一和第二超导电极层的组成不同的组成。

公开(公告)号：US08032196B2

公开(公告)日：2011-10-04

申请号：US11895256

申请日：2007-08-23

申请人： Hironori Wakana ,  Seiji Adachi ,  Koji Tsubone ,  Keiichi Tanabe

发明人： Hironori Wakana ,  Seiji Adachi ,  Koji Tsubone ,  Keiichi Tanabe

IPC分类号： H01L29/06 ,  H01L27/00 ,  H01L29/00 ,  H01L39/22

CPC分类号： H01L39/225 ,  H01L39/2496 ,  Y10S505/702

摘要： A Josephson device includes a first superconducting electrode layer, a barrier layer and a second superconducting electrode layer that are successively stacked. The first and second superconducting electrode layers are made of an oxide superconductor material having (RE)1(AE)2Cu3Oy as a main component, where an element RE is at least one element selected from a group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, and an element AE is at least one element selected from a group consisting of Ba, Sr and Ca. The barrier layer is made of a material that includes the element RE, the element AE, Cu and oxygen, where in cations within the material forming the barrier layer, a Cu content is in a range of 35 At. % to 55 At. % and an RE content is in a range of 12 At. % to 30 At. %, and the barrier layer has a composition different from compositions of the first and second superconducting electrode layers.

摘要翻译： 约瑟夫逊装置包括依次堆叠的第一超导电极层，阻挡层和第二超导电极层。 第一和第二超导电极层由具有（RE）1（AE）2Cu 3 O y作为主要成分的氧化物超导体材料制成，其中元素RE为选自Y，La，Pr，Nd中的至少一种元素 ，Sm，Eu，Gd，Dy，Ho，Er，Tm，Yb和Lu，元素AE为选自Ba，Sr和Ca中的至少一种元素。 阻挡层由包括元素RE，元素AE，Cu和氧的材料制成，其中在形成阻挡层的材料内的阳离子中Cu含量在35Aa的范围内。 ％至55 At。 ％，RE含量在12 At范围内。 ％至30 At。 ％，并且阻挡层具有与第一和第二超导电极层的组成不同的组成。

公开(公告)号：US06999806B2

公开(公告)日：2006-02-14

申请号：US10466077

申请日：2002-08-16

申请人： Seiji Adachi ,  Hironori Wakana ,  Keiichi Tanabe

发明人： Seiji Adachi ,  Hironori Wakana ,  Keiichi Tanabe

IPC分类号： H01L23/48 ,  H01L27/00 ,  H01L29/00 ,  H01B12/00

CPC分类号： H01L39/2496 ,  H01L39/225 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Josephson junction having a barrier layer sandwiched by two superconductors wherein the superconductors include one or more elements selected from the group of Y, La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, one or more elements selected from the group of Ba, Sr and Ca, and Cu and oxygen, wherein the two superconductors each include at least five elements with compositions different from each other, or the barrier layer (5) includes one or more elements selected from the group of La, Nd, Sm and Eu, and one or more elements selected from the group of Y, Gd, Dy, Ho, Er, Tm, Yb and Lu.

摘要翻译： 具有由两个超导体夹持的阻挡层的约瑟夫逊结，其中超导体包括选自Y，La，Nd，Sm，Eu，Gd，Dy，Ho，Er，Tm，Yb和Lu中的一种或多种元素，一种或 选自Ba，Sr和Ca以及Cu和氧中的更多元素，其中两个超导体各自包括至少五个具有彼此不同组成的元素，或者阻挡层（5）包括一种或多种选自 La，Nd，Sm和Eu组，以及选自Y，Gd，Dy，Ho，Er，Tm，Yb和Lu中的一种或多种元素。

公开(公告)号：US20110042667A1

公开(公告)日：2011-02-24

申请号：US12838451

申请日：2010-07-17

申请人： Tetsufumi KAWAMURA ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano ,  Takeshi Sato

发明人： Tetsufumi KAWAMURA ,  Hiroyuki Uchiyama ,  Hironori Wakana ,  Mutsuko Hatano ,  Takeshi Sato

IPC分类号： H01L29/24 ,  H01L21/34

CPC分类号： H01L29/7869

摘要： A method for manufacturing a thin film transistor (TFT) through a process including back exposure, in which oxide semiconductor is used for a channel layer; using an electrode over a substrate as a mask, negative resist is exposed to light from the back of the substrate; the negative resist except its exposed part is removed; and an electrode is shaped by etching a conductive film using the exposed part as an etching mask.

摘要翻译： 一种通过包括反向曝光的工艺制造薄膜晶体管（TFT）的方法，其中将氧化物半导体用于沟道层; 使用基板上的电极作为掩模，负光刻胶从基板的背面暴露于光; 去除其外露部分的负光刻胶; 并且通过使用暴露部分作为蚀刻掩模蚀刻导电膜来成形电极。

公开(公告)号：US20100140614A1

公开(公告)日：2010-06-10

申请号：US12633577

申请日：2009-12-08

申请人： Hiroyuki Uchiyama ,  Tetsufumi Kawamura ,  Hironori Wakana

发明人： Hiroyuki Uchiyama ,  Tetsufumi Kawamura ,  Hironori Wakana

IPC分类号： H01L29/24 ,  H01L21/36

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02617 ,  H01L21/28291 ,  H01L27/10873 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/1225 ,  H01L27/3262 ,  H01L51/5206

摘要： A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.

摘要翻译： 在氧化物半导体薄膜中沉积由铟镓锌氧化物，氧化锌锡等制成的氧化物半导体膜时，导入气体中的氧含量比的氧化物半导体与金属之间的接触电阻发生变化的现象 晶体管。 在从金属和氧化物半导体接触的表面的区域的氧含量比为10％以上形成接触层，深度为深度至少3nm以下的区域 进一步形成具有10％或更低的氧含量比的沟道层，从而形成多层结构，并且实现了与电极金属的欧姆特性和诸如抑制阈值电位移动之类的可靠性。