Invention Grant
- Patent Title: Process for manufacturing semiconductor device
- Patent Title (中): 半导体器件制造工艺
-
Application No.: US10984532Application Date: 2004-11-08
-
Publication No.: US07091585B2Publication Date: 2006-08-15
- Inventor: Cheng-Kuang Sun , Kuang Lee , Jui-Hsiang Pan
- Applicant: Cheng-Kuang Sun , Kuang Lee , Jui-Hsiang Pan
- Applicant Address: TW Hsinchu
- Assignee: United MIcroelectronics Corp.
- Current Assignee: United MIcroelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L23/02
- IPC: H01L23/02

Abstract:
A process for fabricating a semiconductor device is provided. The process integrates a cutting film process into the front-end of semiconductor process. The cutting film is directly formed on the curved surface of the micro-lens or a passivation layer is formed on the micro-lens before covering the passivation layer with the cutting film. In addition to micro-particle contamination due to sawing, the process is able to simplify chip packaging and reduce the size of a photosensitive module.
Public/Granted literature
- US20050095739A1 Process for manufacturing semiconductor device Public/Granted day:2005-05-05
Information query
IPC分类: