发明授权
US07092293B1 Non-volatile memory cell integrated with a latch 有权
与锁存器集成的非易失性存储单元

  • 专利标题: Non-volatile memory cell integrated with a latch
  • 专利标题(中): 与锁存器集成的非易失性存储单元
  • 申请号: US10721855
    申请日: 2003-11-25
  • 公开(公告)号: US07092293B1
    公开(公告)日: 2006-08-15
  • 发明人: Phillip A. YoungSunhom Paak
  • 申请人: Phillip A. YoungSunhom Paak
  • 申请人地址: US CA San Jose
  • 专利权人: Xilinx, Inc.
  • 当前专利权人: Xilinx, Inc.
  • 当前专利权人地址: US CA San Jose
  • 代理商 E. Eric Hoffman; Justin Liu
  • 主分类号: G11C11/34
  • IPC分类号: G11C11/34
Non-volatile memory cell integrated with a latch
摘要:
A configuration circuit includes a latch and a dedicated non-volatile memory cell. The non-volatile memory cell is initially programmed or erased. The latch is then set to store a first logic value by coupling the latch to a first voltage supply terminal in response to an activated control signal. When the control signal is de-activated, the latch is de-coupled from the first voltage supply terminal and coupled to the non-volatile memory cell. If the non-volatile memory cell is programmed, the latch is coupled to a second voltage supply terminal, thereby storing a second logic value in the latch. If the non-volatile memory cell is erased, the latch is isolated from the second voltage supply terminal, and the first logic value remains stored in the latch. The latch can also be directly written through one or more access transistors, thereby facilitating testing.
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