发明授权
- 专利标题: Method for PECVD deposition of selected material films
- 专利标题(中): PECVD沉积所选材料膜的方法
-
申请号: US09825611申请日: 2001-04-03
-
公开(公告)号: US07093559B2公开(公告)日: 2006-08-22
- 发明人: Sujit Sharan , Gurtej S. Sandhu
- 申请人: Sujit Sharan , Gurtej S. Sandhu
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Schwegman, Lundberg, Woessner & Kluth, P.A.
- 主分类号: C23C16/44
- IPC分类号: C23C16/44
摘要:
A process for PECVD of selected material films on a substrate comprising the steps of placing a substrate in a PECVD chamber and maintaining the chamber under vacuum pressure while introducing a precursor gas, a reactant gas, and an ionization enhancer agent into the chamber. A plasma is generated from the gases within the chamber. The energy generating the plasma causes the formation of charged species. The resulting charged species of the ionization enhancer agent assists in the formation of chemically reactive species of at least the precursor.
公开/授权文献
- US20010019889A1 Method for PECVD deposition of selected material films 公开/授权日:2001-09-06
信息查询
IPC分类: