发明授权
- 专利标题: Mask, manufacturing method for mask, and manufacturing method for semiconductor device
-
申请号: US10668245申请日: 2003-09-24
-
公开(公告)号: US07094504B2公开(公告)日: 2006-08-22
- 发明人: Kyoko Izuha , Hideki Kanai , Soichi Inoue , Shingo Kanamitsu , Shinichi Ito
- 申请人: Kyoko Izuha , Hideki Kanai , Soichi Inoue , Shingo Kanamitsu , Shinichi Ito
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2002-279742 20020925
- 主分类号: G01F9/00
- IPC分类号: G01F9/00
摘要:
Disclosed is a mask comprising a first area including a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate, and a first opening area surrounded by the first surrounding area, and a second area including a second surrounding area in which a halftone phase shift film is provided on the transparent substrate and a second opening area surrounded by the second surrounding area, wherein a transparent film is provided in at least a part of the second opening area, the transparent film being configured to give a predetermined phase difference to exposure light passing through that part of the second opening area in which the transparent film is provided relative to exposure light passing through the second surrounding area.
公开/授权文献
信息查询