摘要:
A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.
摘要:
A solid-state imaging device includes a semiconductor substrate, photodiodes, a first insulating film, a second insulating film, a third insulating film, and a color filter. The photodiodes are disposed on the semiconductor substrate. The first insulating film covers a multilayer wiring on the semiconductor substrate. The first insulating film comprises a material having a first refractive index lower than a refractive index of the semiconductor substrate for at least bottom surface and top surface portions of the first insulating film. The second insulating film has a second refractive index higher than the first refractive index. The third insulating film has a third refractive index higher than the second refractive index.
摘要:
A pattern verification method comprising preparing a desired pattern and a mask pattern forming the desired pattern on a substrate, defining at least one evaluation point on an edge of the desired pattern, defining at least one process parameter to compute the transferred/formed pattern, defining a reference value and a variable range for each of the process parameters, computing a positional displacement for each first points corresponding to the evaluation point, first points computed using correction mask pattern and a plurality of combinations of parameter values obtained by varying the process parameters within the variable range or within the respective variable ranges, the positional displacement being displacement between first point and the evaluation point, computing a statistics of the positional displacements for each of the evaluation points, and outputting information modifying the mask pattern according to the statistics.
摘要:
A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.
摘要:
A method of determining a photo mask, includes specifying a mask pattern for a photo mask for a first exposure apparatus, specifying a plurality of exposure conditions allowed to be set for a second exposure apparatus, predicting a projection image of the mask pattern to be projected on a substrate by the second exposure apparatus, for each of the exposure conditions, predicting a processed pattern to be formed on a substrate surface on the basis of the projection image, for each of the exposure conditions, determining whether or not the processed pattern meets a predetermined condition for each of the exposure conditions, and determining that the photo mask is applicable to the second exposure apparatus if the processed pattern meets the predetermined condition for at least one of the exposure conditions.
摘要:
A pattern data correction method is disclosed, which comprises preparing an integrated circuit pattern, setting a tolerance to the pattern that is allowable error range when the pattern is transferred on a substrate, creating a target pattern within the tolerance, and making correction for the target pattern to make a first correction pattern under a predetermined condition.
摘要:
A method of determining a photo mask, includes specifying a mask pattern for a photo mask for a first exposure apparatus, specifying a plurality of exposure conditions allowed to be set for a second exposure apparatus, predicting a projection image of the mask pattern to be projected on a substrate by the second exposure apparatus, for each of the exposure conditions, predicting a processed pattern to be formed on a substrate surface on the basis of the projection image, for each of the exposure conditions, determining whether or not the processed pattern meets a predetermined condition for each of the exposure conditions, and determining that the photo mask is applicable to the second exposure apparatus if the processed pattern meets the predetermined condition for at least one of the exposure conditions.
摘要:
A photomask has a device pattern, which has an opening portion and a mask portion, and either a focus monitor pattern or an exposure dose monitor pattern, which has an opening portion and a mask portion and which has the same plane pattern shape as at least a partial region of a device pattern. The phase difference in transmitted exposure light between the opening portion and the mask portion of the focus monitor pattern is different from that between the opening portion and the mask portion of the device pattern. The opening portion of the exposure dose monitor pattern has a different exposure dose transmittance from that of the opening portion of the device pattern.
摘要:
There are provided a transparent conductive film, as well as a heater, a touch panel, a solar battery, an organic EL device, a liquid crystal device, and an electronic paper that are provided with the transparent conductive film, the transparent conductive film being capable of easing a decline in optical transmittance when graphene is laminated, and of achieving optical transmittance higher than an upper limit of optical transmittance of a single layer of graphene. The transparent conductive film includes a single-layered conductive graphene sheet. The single-layered conductive graphene sheet includes a first region and a second region, the first region being configured of graphene, and the second region being surrounded by the first region and having optical transmittance that is higher than optical transmittance of the first region.
摘要:
A solid-state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate and generates signal charge in correspondence with a light amount of incident light; and a transparent electrode that is formed in an upper portion of the substrate and includes a first area formed from a nano carbon material and a second area that is brought into contact with the first area and has light transmittance higher than that of the first area.