Invention Grant
- Patent Title: Method of forming poly-silicon thin film transistors
- Patent Title (中): 形成多晶硅薄膜晶体管的方法
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Application No.: US10733721Application Date: 2003-12-11
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Publication No.: US07094656B2Publication Date: 2006-08-22
- Inventor: Chi-Lin Chen , Shun-Fa Huang , Liang-Tang Wang
- Applicant: Chi-Lin Chen , Shun-Fa Huang , Liang-Tang Wang
- Applicant Address: TW Hsinchu Hsien
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Thomas, Kayden, Horstemeyer & Risley
- Priority: TW92127868A 20031007
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat energy to an amorphous silicon layer. Next, crystallization occurs in the amorphous silicon layer to form poly-silicon. Therefore a poly-silicon thin film transistor is produced.
Public/Granted literature
- US20050074930A1 Method of forming poly-silicon thin film transistors Public/Granted day:2005-04-07
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