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    LOW TEMPERATURE DIRECT DEPOSITED POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    LOW TEMPERATURE DIRECT DEPOSITED POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    低温直接沉积多晶硅薄膜晶体管结构及其制造方法

    公开(公告)号：US20070254399A1

    公开(公告)日：2007-11-01

    申请号：US11380491

    申请日：2006-04-27

    Applicant: Min WANG ,  I-Hsuan PENG ,  Te-Chi WONG ,  Liang-Tang WANG ,  Chin-Jen HUANG

    Inventor： Min WANG ,  I-Hsuan PENG ,  Te-Chi WONG ,  Liang-Tang WANG ,  Chin-Jen HUANG

    IPC: H01L21/00 ,  H01L21/84

    CPC classification number: H01L29/66757 ,  H01L29/78609 ,  H01L29/78678

    Abstract: A method for manufacturing a thin film transistor (“TFT”) device includes providing a substrate, forming a patterned first metal layer on the substrate, forming an insulating layer over the patterned first metal layer, forming an amorphous silicon layer over the insulating layer, forming a first polycrystalline silicon layer over the amorphous silicon layer, forming a second polycrystalline silicon layer over the first polycrystalline silicon layer, doping the second polycrystalline silicon layer to form a doped polycrystalline silicon layer, patterning the amorphous silicon layer, first polycrystalline silicon layer and doped polycrystalline silicon layer to form an active region layer for the TFT device, and forming a patterned second metal layer over the active region layer.

    Abstract translation: 一种制造薄膜晶体管（“TFT”）器件的方法包括提供衬底，在衬底上形成图案化的第一金属层，在图案化的第一金属层上形成绝缘层，在绝缘层上形成非晶硅层， 在所述非晶硅层上形成第一多晶硅层，在所述第一多晶硅层上形成第二多晶硅层，掺杂所述第二多晶硅层以形成掺杂多晶硅层，图案化所述非晶硅层，第一多晶硅层和 掺杂多晶硅层以形成TFT器件的有源区，并在有源区上形成图案化的第二金属层。

    Method of direct deposition of polycrystalline silicon
    2.
    发明申请
    Method of direct deposition of polycrystalline silicon 有权
    直接沉积多晶硅的方法

    公开(公告)号：US20070105373A1

    公开(公告)日：2007-05-10

    申请号：US11270862

    申请日：2005-11-09

    Applicant: Liang-Tang Wang ,  Chi-Lin Chen ,  I-Hsuan Peng ,  Jung-Fang Chang ,  Chin-Jen Huang

    Inventor： Liang-Tang Wang ,  Chi-Lin Chen ,  I-Hsuan Peng ,  Jung-Fang Chang ,  Chin-Jen Huang

    IPC: H01L21/44

    CPC classification number: H01L21/02532 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/5096 ,  H01L21/02422 ,  H01L21/0262 ,  H01L27/1214

    Abstract: A method for forming a polysilicon film in a plasma-assisted chemical vapor deposition (CVD) system including a chamber in which a first electrode and a second electrode spaced apart from the first electrode are provided comprises providing a substrate on the second electrode, the substrate including a surface exposed to the first electrode, applying a first power to the first electrode for generating a plasma in the chamber, applying a second power to the second electrode during a nucleation stage of the polysilicon film for ion bombarding the surface of the substrate, and flowing an erosive gas into the chamber.

    Abstract translation: 一种在等离子体辅助化学气相沉积（CVD）系统中形成多晶硅膜的方法，包括：设置有与第一电极间隔开的第一电极和第二电极的腔室，包括在第二电极上设置衬底， 包括暴露于第一电极的表面，向第一电极施加第一功率以在腔室中产生等离子体，在用于离子轰击衬底表面的多晶硅膜的成核阶段期间向第二电极施加第二功率， 并将侵蚀性气体流入室内。

    Method for forming a single-crystal silicon layer on a transparent substrate
    3.
    发明授权
    Method for forming a single-crystal silicon layer on a transparent substrate 有权
    在透明基板上形成单晶硅层的方法

    公开(公告)号：US07045441B2

    公开(公告)日：2006-05-16

    申请号：US10628893

    申请日：2003-07-28

    Applicant: Chich Shang Chang ,  Chi-Shen Lee ,  Shun-Fa Huang ,  Jung Fang Chang ,  Wen-Chih Hu ,  Liang-Tang Wang ,  Chai-Yuan Sheu

    Inventor： Chich Shang Chang ,  Chi-Shen Lee ,  Shun-Fa Huang ,  Jung Fang Chang ,  Wen-Chih Hu ,  Liang-Tang Wang ,  Chai-Yuan Sheu

    IPC: H01L21/762 ,  H01L23/15

    CPC classification number: B32B37/00 ,  B32B2310/0825 ,  B32B2311/02 ,  B32B2315/08 ,  C03C27/046 ,  H01L2224/83192 ,  Y10S438/977

    Abstract: A method for forming a, single-crystal silicon layer on a transparent substrate. A transparent substrate having an amorphous silicon layer formed thereon and a silicon wafer having a hydrogen ion layer formed therein are provided. The silicon wafer is then reversed and laminated onto the amorphous silicon layer so that a layer of single-crystal silicon is between the hydrogen ion layer and the amorphous silicon layer. The laminated silicon wafer and the amorphous silicon layer are then subjected to laser or infrared light to cause chemical bonding of the single crystal silicon layer and the amorphous silicon layer and inducing a hydro-cracking reaction thereby separating the silicon wafer is and the transparent substrate at the hydrogen ion layer, and leaving the single-crystal silicon layer on the transparent substrate.

    Abstract translation: 在透明基板上形成单晶硅层的方法。 提供其上形成有非晶硅层的透明基板和其中形成有氢离子层的硅晶片。 然后将硅晶片反转并层压到非晶硅层上，使得单晶硅层位于氢离子层和非晶硅层之间。 然后对层压硅晶片和非晶硅层进行激光或红外光以使单晶硅层和非晶硅层发生化学键合，并引起加氢裂化反应，从而将硅晶片和透明基板分离 氢离子层，并在透明基板上留下单晶硅层。

    Method of forming poly-silicon thin film transistors
    5.
    发明申请
    Method of forming poly-silicon thin film transistors 有权
    形成多晶硅薄膜晶体管的方法

    公开(公告)号：US20050074930A1

    公开(公告)日：2005-04-07

    申请号：US10733721

    申请日：2003-12-11

    Applicant: Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

    Inventor： Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

    IPC: H01L21/20 ,  H01L21/00 ,  H01L21/336 ,  H01L29/49 ,  H01L29/786

    CPC classification number: H01L29/66757 ,  H01L29/4908 ,  H01L29/66765

    Abstract: A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat energy to an amorphous silicon layer. Next, crystallization occurs in the amorphous silicon layer to form poly-silicon. Therefore a poly-silicon thin film transistor is produced.

    Abstract translation: 描述形成多晶硅薄膜晶体管的方法。 在基板上形成非晶硅薄膜晶体管，然后使用红外（IR）加热工艺。 栅极金属和源极/漏极金属被快速加热，并将热能传导到非晶硅层。 接下来，在非晶硅层中发生结晶以形成多晶硅。 因此，制造多晶硅薄膜晶体管。

    PHOTOVOLTAIC CELL MODULE AND METHOD OF MAKING THE SAME
    6.
    发明申请
    PHOTOVOLTAIC CELL MODULE AND METHOD OF MAKING THE SAME 审中-公开
    光电池模块及其制造方法

    公开(公告)号：US20110005566A1

    公开(公告)日：2011-01-13

    申请号：US12498370

    申请日：2009-07-07

    Applicant: Chih-Jeng HUANG ,  Yu-Hua WU ,  Liang-Tang WANG ,  Wei-Teng CHANG

    Inventor： Chih-Jeng HUANG ,  Yu-Hua WU ,  Liang-Tang WANG ,  Wei-Teng CHANG

    IPC: H01L31/042 ,  H01L31/18

    CPC classification number: H01L31/02008 ,  H01L31/046 ,  H01L31/0463 ,  Y02E10/50

    Abstract: A photovoltaic cell module and a method of making the same are provided. The photovoltaic cell module includes a first cell including a first transparent conductive substrate, a first photovoltaic conversion layer, and a first electrode layer, at least a second cell electrically connected to the first cell in series; and a second electrode layer electrically connected to the second cell. In the first cell, the first photovoltaic conversion layer is disposed on the first transparent conductive substrate. The first electrode layer is disposed on the first photovoltaic conversion layer and electrically connected to the first transparent conductive substrate. In addition, the present invention also provides the method of making the photovoltaic cell module.

    Abstract translation: 提供了一种光伏电池模块及其制造方法。 光伏电池模块包括：第一电池，包括第一透明导电衬底，第一光电转换层和第一电极层，至少第二电池与第一电池串联电连接; 以及与第二电池电连接的第二电极层。 在第一单元中，第一光电转换层设置在第一透明导电基板上。 第一电极层设置在第一光电转换层上并与第一透明导电基板电连接。 此外，本发明还提供了制造光伏电池模块的方法。

    Method of direct deposition of polycrystalline silicon
    8.
    发明授权
    Method of direct deposition of polycrystalline silicon 有权
    直接沉积多晶硅的方法

    公开(公告)号：US07521341B2

    公开(公告)日：2009-04-21

    申请号：US11270862

    申请日：2005-11-09

    Applicant: Liang-Tang Wang ,  Chi-Lin Chen ,  I-Hsuan Peng ,  Jung-Fang Chang ,  Chin-Jen Huang

    Inventor： Liang-Tang Wang ,  Chi-Lin Chen ,  I-Hsuan Peng ,  Jung-Fang Chang ,  Chin-Jen Huang

    IPC: H01L21/36

    CPC classification number: H01L21/02532 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/5096 ,  H01L21/02422 ,  H01L21/0262 ,  H01L27/1214

    Abstract: A method for forming a polysilicon film in a plasma-assisted chemical vapor deposition (CVD) system including a chamber in which a first electrode and a second electrode spaced apart from the first electrode are provided comprises providing a substrate on the second electrode, the substrate including a surface exposed to the first electrode, applying a first power to the first electrode for generating a plasma in the chamber, applying a second power to the second electrode during a nucleation stage of the polysilicon film for ion bombarding the surface of the substrate, and flowing an erosive gas into the chamber.

    Abstract translation: 一种在等离子体辅助化学气相沉积（CVD）系统中形成多晶硅膜的方法，包括：设置有与第一电极间隔开的第一电极和第二电极的腔室，包括在第二电极上设置衬底， 包括暴露于第一电极的表面，向第一电极施加第一功率以在腔室中产生等离子体，在用于离子轰击衬底表面的多晶硅膜的成核阶段期间，向第二电极施加第二功率， 并将侵蚀性气体流入室内。

    Method of forming poly-silicon thin film transistors
    10.
    发明授权
    Method of forming poly-silicon thin film transistors 有权
    形成多晶硅薄膜晶体管的方法

    公开(公告)号：US07361566B2

    公开(公告)日：2008-04-22

    申请号：US11479895

    申请日：2006-06-30

    Applicant: Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

    Inventor： Chi-Lin Chen ,  Shun-Fa Huang ,  Liang-Tang Wang

    IPC: H01L21/336

    CPC classification number: H01L29/66757 ,  H01L29/4908 ,  H01L29/66765

    Abstract: A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat energy to an amorphous silicon layer. Next, crystallization occurs in the amorphous silicon layer to form poly-silicon. Therefore a poly-silicon thin film transistor is produced.

    Abstract translation: 描述形成多晶硅薄膜晶体管的方法。 在基板上形成非晶硅薄膜晶体管，然后使用红外（IR）加热工艺。 栅极金属和源极/漏极金属被快速加热，并将热能传导到非晶硅层。 接下来，在非晶硅层中发生结晶以形成多晶硅。 因此，制造多晶硅薄膜晶体管。

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