发明授权
US07095771B2 Implant damaged oxide insulating region in vertical cavity surface emitting laser
有权
植入物在垂直腔表面发射激光器中损坏氧化物绝缘区域
- 专利标题: Implant damaged oxide insulating region in vertical cavity surface emitting laser
- 专利标题(中): 植入物在垂直腔表面发射激光器中损坏氧化物绝缘区域
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申请号: US10922028申请日: 2004-08-19
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公开(公告)号: US07095771B2公开(公告)日: 2006-08-22
- 发明人: James R. Biard , James K. Guenter
- 申请人: James R. Biard , James K. Guenter
- 申请人地址: US CA Sunnyvale
- 专利权人: Finisar Corporation
- 当前专利权人: Finisar Corporation
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Workman Nydegger
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
Optical transmitters are disclosed, one example of which includes a vertical cavity surface emitting laser that includes a substrate upon which a lower mirror is disposed. In this example, a spacer is disposed between the lower mirror and an active region. Another spacer separates the active region and an upper mirror. The upper mirror includes an oxide insulating region that is damaged by ion implantation so that desirable effects are achieved with respect to lateral sheet resistance, and quantum well recombination centers in the active region.