发明授权
- 专利标题: Laser annealing apparatus
- 专利标题(中): 激光退火装置
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申请号: US10305339申请日: 2002-11-27
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公开(公告)号: US07097709B2公开(公告)日: 2006-08-29
- 发明人: Tatsuki Okamoto , Tetsuya Ogawa , Yukio Sato , Junichi Nishimae
- 申请人: Tatsuki Okamoto , Tetsuya Ogawa , Yukio Sato , Junichi Nishimae
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Leydig, Voit & Mayer, Ltd.
- 主分类号: C30B1/08
- IPC分类号: C30B1/08
摘要:
A laser annealing apparatus for crystallizing a semiconductor film with a linearly radiating laser beam including a laser oscillator and laser optical systems for forming a laser beam radiated from the laser oscillator linearly, for application to a semiconductor film. Each linearly radiating laser beam from each laser optical system radiated onto the semiconductor film is arrayed almost linearly in a length direction, with an interval on the semiconductor film.
公开/授权文献
- US20040099209A1 Laser annealing apparatus 公开/授权日:2004-05-27
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