- 专利标题: Photomask, method of manufacturing a photomask, and method of manufacturing an electronic product
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申请号: US10615194申请日: 2003-07-09
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公开(公告)号: US07097946B2公开(公告)日: 2006-08-29
- 发明人: Sachiyo Ito , Masamitsu Itoh , Masahiko Hasunuma
- 申请人: Sachiyo Ito , Masamitsu Itoh , Masahiko Hasunuma
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2002-199918 20020709
- 主分类号: G03F9/00
- IPC分类号: G03F9/00 ; G03C5/00
摘要:
A photomask comprises a substrate, a translucent film selectively formed on the substrate, and a shading film selectively formed on the translucent film, wherein when the substrate, the translucent film and the shading film have Young's moduli (MPa) E0 E1 and E2, and film thickness (m) d0, d1 and d2 respectively, internal stresses (MPa) of the translucent film and the shading film at room temperature are s1 and s2 respectively, a covering rate by the translucent film defined by an area in which the shading film is not formed is expressed as h, and coefficients are expressed as k1=1.3×10−8, k2=−9.5×10−2, k3=6.0×10−7, and k4=−5.2×10−2 respectively, the substrate, the translucent film and the shading film satisfy a condition given by the following expression: 1 E 0 · d 0 · { h · ( k 1 · S 1 E 1 · d 1 + k 2 ) + ( k 3 · S 2 E 2 · d 2 + k 4 ) } ≦ 1.4 × 10 - 4 ( m - 1 ) .
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