发明授权
- 专利标题： Method of manufacturing a semiconductor device having adjoining substrates
- 专利标题（中）： 制造具有邻接基板的半导体器件的方法
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申请号： US10392191申请日： 2003-03-20
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公开(公告)号： US07101729B2公开(公告)日： 2006-09-05
- 发明人: Mutsumi Kimura , Satoshi Inoue , Sumio Utsunomiya , Hiroyuki Hara , Wakao Miyazawa
- 申请人： Mutsumi Kimura , Satoshi Inoue , Sumio Utsunomiya , Hiroyuki Hara , Wakao Miyazawa
- 申请人地址： JP Tokyo
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2002-093321 20020328; JP2003-076904 20030320
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
The present invention aims to manufacture a large size semiconductor device with the inter-substrate transcription technology of thin film circuits. Enlargement is enabled by disposing a plurality of second substrates (21) in a tile shape. As the second substrate (21), a print substrate or flexible print circuit having double-sided wiring or multilayer wiring is employed. The plurality of second substrates (21) is driven independently, and the plurality of second substrates (21) is made to mutually overlap, and a drive circuit (23) is disposed at such overlapping portion. Moreover, the plurality of second substrates (21) is made to mutually overlap, and the mutual circuits are connected at such overlapping portion.
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