Matrix type display device with optical material at predetermined positions and manufacturing method thereof
    1.
    发明授权
    Matrix type display device with optical material at predetermined positions and manufacturing method thereof 有权
    具有预定位置的光学材料的矩阵式显示装置及其制造方法

    公开(公告)号:US08580333B2

    公开(公告)日:2013-11-12

    申请号:US12614978

    申请日:2009-11-09

    摘要: An object of the invention is to improve patterning accuracy while maintaining low cost, high throughput and a high degree of freedom of an optical material in a matrix type display device and a manufacturing method thereof.In order to achieve the object, a difference in height, a desired distribution of liquid repellency and affinity to liquid, or a desired potential distribution is formed by utilizing first bus lines in a passive matrix type display device or utilizing scanning lines, signal lines, common current supply lines, pixel electrodes, an interlevel insulation film, or a light shielding layer in an active matrix type display device. A liquid optical material is selectively coated at predetermined positions by utilizing the difference in height, the desired distribution of liquid repellency and affinity to liquid, or the desired potential distribution.

    摘要翻译: 本发明的目的在于提高图形精度,同时维持矩阵式显示装置中的光学材料的低成本,高产量和高自由度及其制造方法。 为了实现该目的,通过利用无源矩阵型显示装置中的第一总线或者利用扫描线,信号线,等等来形成高度差异,液体排斥性和对液体的亲和​​性的所需分布或期望的电位分布, 有源矩阵型显示装置中的公共电流供给线,像素电极,层间绝缘膜或遮光层。 液体光学材料通过利用高度差异,所需的液体排斥性和对液体的亲和​​力的分布或所需的电位分布来选择性地涂覆在预定位置。

    Current-driven light-emitting display apparatus and method of producing the same
    2.
    发明授权
    Current-driven light-emitting display apparatus and method of producing the same 有权
    电流驱动发光显示装置及其制造方法

    公开(公告)号:US08188647B2

    公开(公告)日:2012-05-29

    申请号:US12379680

    申请日:2009-02-26

    IPC分类号: H01J1/28

    摘要: An electroluminescent device including a substrate, a transistor disposed above the substrate, the transistor including a gate electrode, a silicon film opposing the gate electrode, and a gate insulating film between the gate electrode and the silicon film. The electroluminescent device including a first interlayer insulation film covering the transistor, a second interlayer insulation film disposed above the first interlayer insulation film, and a pixel electrode disposed above the second interlayer insulation film and electrically connected to the transistor. The electroluminescent device including an organic EL layer disposed between the pixel electrode and a counter electrode, and a capacitor including a first electrode formed by the same material as the silicon film and a second electrode formed by the same material as the gate electrode.

    摘要翻译: 一种电致发光器件,包括衬底,设置在衬底上的晶体管,晶体管包括栅电极,与栅电极相对的硅膜,以及栅电极和硅膜之间的栅极绝缘膜。 电致发光器件包括覆盖晶体管的第一层间绝缘膜,设置在第一层间绝缘膜上方的第二层间绝缘膜和设置在第二层间绝缘膜上方并电连接到晶体管的像素电极。 电致发光器件包括设置在像素电极和对电极之间的有机EL层和包括由与硅膜相同的材料形成的第一电极的电容器和由与栅电极相同的材料形成的第二电极。

    Display apparatus
    3.
    发明授权
    Display apparatus 有权
    显示装置

    公开(公告)号:US08154199B2

    公开(公告)日:2012-04-10

    申请号:US11505459

    申请日:2006-08-17

    IPC分类号: H01L27/02 H01L27/15

    摘要: An electroluminescent apparatus having a substrate and a transistor formed above the substrate and having a gate electrode and a semiconductor film. The electroluminescent apparatus having a first insulation film including a first contact hole and a junction electrode contacted to the semiconductor film through the first contact hole. The electroluminescent apparatus having a second insulation film formed above the junction electrode and the first insulation film and including a second contact hole and a pixel electrode formed on the second insulation film and contacted to the junction electrode through the second contact hole. The electroluminescent apparatus having an insulating layer formed above the second insulation film, an organic semiconductor film formed at an emitting region above the pixel electrode, and an opposite electrode formed above the organic semiconductor film and insulating layer. The insulating layer surrounding the emitting region and overlapping the second contact hole.

    摘要翻译: 一种具有衬底和晶体管的电致发光器件,其形成在衬底上并具有栅电极和半导体膜。 该电致发光装置具有第一绝缘膜,该第一绝缘膜包括通过第一接触孔与半导体膜接触的第一接触孔和接合电极。 所述电致发光装置具有形成在所述接合电极和所述第一绝缘膜上方的第二绝缘膜,并且包括形成在所述第二绝缘膜上的第二接触孔和像素电极,并且通过所述第二接触孔与所述接合电极接触。 具有形成在第二绝缘膜上方的绝缘层的电致发光装置,形成在像素电极上方的发光区域的有机半导体膜,以及形成在有机半导体膜和绝缘层上方的相对电极。 围绕发射区域并与第二接触孔重叠的绝缘层。

    Method of manufacturing electro-optical device, electro-optical device, transferred chip, transfer origin substrate, and electronic apparatus
    7.
    发明申请
    Method of manufacturing electro-optical device, electro-optical device, transferred chip, transfer origin substrate, and electronic apparatus 有权
    电光装置,电光装置,转印芯片,转印原色基板和电子装置的制造方法

    公开(公告)号:US20070090368A1

    公开(公告)日:2007-04-26

    申请号:US11640320

    申请日:2006-12-18

    申请人: Mutsumi Kimura

    发明人: Mutsumi Kimura

    IPC分类号: H01L31/00

    摘要: The invention enhances a production yield of a display device (an electro-optical device). The invention provides a method of manufacturing an electro-optical device including a display region in which a plurality of basic pixels are arranged, each basic pixel including a plurality of color pixels. The method includes: forming on a first substrate lines to drive a plurality of electro-optical elements respectively constituting the color pixels, correspondingly to the arrangement of the basic pixels; forming on a second substrate, as a chip to be transferred to each basic pixel, a drive circuit to drive the plurality of electro-optical elements which constitutes the plurality of color pixels of the basic pixels to obtain a plurality of basic-pixel driving chips; and transferring step of transferring the respective basic-pixel driving chips from the second substrate onto the first substrate, and connecting the drive circuits to regions of the lines corresponding to the basic pixels.

    摘要翻译: 本发明提高了显示装置(电光装置)的制作成品率。 本发明提供一种制造电光装置的方法,该电光装置包括布置有多个基本像素的显示区域,每个基本像素包括多个彩色像素。 该方法包括:对应于基本像素的布置,在第一基板线上形成分别构成彩色像素的多个电光元件; 在第二基板上形成作为要传送到每个基本像素的芯片的驱动电路,驱动构成基本像素的多个彩色像素的多个电光元件,以获得多个基本像素驱动芯片 ; 以及将各个基本像素驱动芯片从第二基板传送到第一基板上的传送步骤,以及将驱动电路连接到与基本像素对应的行的区域。

    Light emitting device, method of manufacturing the same, and electronic apparatus
    9.
    发明申请
    Light emitting device, method of manufacturing the same, and electronic apparatus 有权
    发光装置及其制造方法以及电子设备

    公开(公告)号:US20060220544A1

    公开(公告)日:2006-10-05

    申请号:US11391376

    申请日:2006-03-29

    IPC分类号: H01J1/62 H01J63/04

    摘要: A light emitting device includes: a plurality of first electrodes; a plurality of second electrodes; and a plurality of light emitting films. Each of the plurality of light emitting films is disposed between one first electrode among the plurality of first electrodes and one second electrode among the plurality of second electrodes. The one first electrode is electrically connected to the second electrode that is adjacent to the one second electrode among the plurality of second electrodes.

    摘要翻译: 发光器件包括:多个第一电极; 多个第二电极; 和多个发光膜。 多个发光膜中的每一个设置在多个第一电极中的一个第一电极和多个第二电极中的一个第二电极之间。 一个第一电极电连接到与多个第二电极中的一个第二电极相邻的第二电极。

    Semiconductor film transistor
    10.
    发明授权
    Semiconductor film transistor 有权
    半导体薄膜晶体管

    公开(公告)号:US07112818B2

    公开(公告)日:2006-09-26

    申请号:US10058116

    申请日:2002-01-29

    申请人: Mutsumi Kimura

    发明人: Mutsumi Kimura

    IPC分类号: H01L29/78

    摘要: In accordance with the invention, the width of a gate electrode is smaller than the width of the semiconductor film. A sub gate electrode connected to the gate electrode is disposed, at the gate electrode side of the semiconductor film, away from the semiconductor film more than gate electrode. The width of the sub gate electrodes is larger than the width of the semiconductor film. Ends of the semiconductor film have regions formed of an intrinsic semiconductor which is not doped with dopant. In a semiconductor device, this structure is suitable to reduce degradation over time which is caused by an increase of the electric field strength or the carrier concentration at the ends of the semiconductor film.

    摘要翻译: 根据本发明,栅电极的宽度小于半导体膜的宽度。 连接到栅电极的子栅极电极设置在半导体膜的栅电极侧,远离栅电极远离半导体膜。 子栅电极的宽度大于半导体膜的宽度。 半导体膜的端部具有不掺杂掺杂剂的本征半导体形成的区域。 在半导体器件中,该结构适合于减小由半导体膜的端部的电场强度或载流子浓度的增加引起的随着时间的劣化。