- 专利标题: Micromachine and method of fabricating the same
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申请号: US10835769申请日: 2004-04-30
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公开(公告)号: US07102268B2公开(公告)日: 2006-09-05
- 发明人: Kazuhiro Matsuhisa
- 申请人: Kazuhiro Matsuhisa
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Sonnenschein Nath & Rosenthal LLP
- 优先权: JPP2003-133929 20030513
- 主分类号: H02N1/00
- IPC分类号: H02N1/00
摘要:
A micromachine successfully reduced in parasitic capacity between input and output electrodes, and having an oscillator configured as ensuring a high S/N ratio under operation at higher frequencies is disclosed. The micromachine comprises an insulating layer formed on a substrate; a first electrode for signal input formed on the insulating layer; a second electrode for signal output formed on the insulating layer; and an oscillator electrode formed as being opposed with the first electrode and the second electrode and as being spaced therefrom by an air gap, wherein the insulating layer has a groove formed therein at least between the first electrode and the second electrode.
公开/授权文献
- US20040251793A1 Micromachine and method of fabricating the same 公开/授权日:2004-12-16