- 专利标题: Field emission cold cathode device of lateral type
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申请号: US10799876申请日: 2004-03-15
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公开(公告)号: US07102277B2公开(公告)日: 2006-09-05
- 发明人: Masayuki Nakamoto
- 申请人: Masayuki Nakamoto
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2000-351610 20001117
- 主分类号: H01J1/304
- IPC分类号: H01J1/304
摘要:
A field emission cold cathode device of a lateral type includes a cathode electrode and gate electrode disposed on a major surface of a support substrate laterally side by side. The cathode electrode and gate electrode have side surfaces which oppose each other, and an emitter is disposed on the opposite side surface of the cathode electrode. The emitter includes a metal plating layer formed on the cathode electrode, and a plurality of granular or rod-shaped micro-bodies. The micro-bodies are consisting essentially of a material selected from the group consisting of fullerenes, carbon nanotubes, graphite, a material with a low work function, a material with a negative electron affinity, and a metal material, and are supported in the metal plating layer in a dispersed state.
公开/授权文献
- US20040183421A1 Field emission cold cathode device of lateral type 公开/授权日:2004-09-23
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