- 专利标题： Resist compositions and patterning process
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申请号： US10226286申请日： 2002-08-23
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公开(公告)号： US07105267B2公开(公告)日： 2006-09-12
- 发明人: Jun Hatakeyama , Youichi Ohsawa , Tomohiro Kobayashi
- 申请人： Jun Hatakeyama , Youichi Ohsawa , Tomohiro Kobayashi
- 申请人地址： JP Tokyo
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Millen, White, Zelano & Branigan, P.C.
- 优先权： JP2001-254293 20010824
- 主分类号： G03F7/004
- IPC分类号： G03F7/004
摘要：
In a resist composition comprising a base resin which is a high molecular weight structure free from an aromatic substituent group, a photoacid generator, and a solvent, the photoacid generator is a one capable of generating a perfluoroalkyl ether sulfonic acid. The resist composition has many advantages including excellent resolution, minimized size difference between isolated and densely packed patterns, and minimized line edge roughness.
公开/授权文献
- US20030113659A1 Resist compositions and patterning process 公开/授权日：2003-06-19