利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

380 条记录 (耗时 0.047 秒)

    Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method
    1.
    发明授权
    Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method 有权
    光生酸化合物，化学放大阳性抗蚀剂材料和图案形成方法

    公开(公告)号：US07303852B2

    公开(公告)日：2007-12-04

    申请号：US10375773

    申请日：2003-02-27

    申请人： Jun Hatakeyama ,  Tomohiro Kobayashi ,  Youichi Ohsawa

    发明人： Jun Hatakeyama ,  Tomohiro Kobayashi ,  Youichi Ohsawa

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/0045 ,  C07C311/48 ,  C07D333/46 ,  C07D335/02 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0758 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/115

    摘要： The invention provides a high-resolution resist material comprising an acid generator that has high sensitivity and high resolution with respect to high-energy rays of 300 nm or less, has small line-edge roughness, and is superior in heat stability and in shelf stability, and provides a pattern forming method that uses this resist material. The invention further provides a chemically amplified positive resist material comprising a base resin, an acid generator and a solvent in which the acid generator generates an alkylimidic acid containing a fluorine group, and provides a pattern forming method comprising a step of applying the resist material to the substrate, a step of performing exposure to a high-energy ray of a wavelength of 300 nm or less through a photomask following heat treatment, and a step of performing development by a developing solution following heat treatment.

    摘要翻译： 本发明提供了一种高分辨率抗蚀剂材料，其包括相对于300nm以下的高能量射线具有高灵敏度和高分辨率的酸发生剂，具有小的线边缘粗糙度，并且具有优异的热稳定性和储存稳定性 ，并提供使用该抗蚀剂材料的图案形成方法。 本发明还提供了一种化学放大正性抗蚀剂材料，其包括基础树脂，酸产生剂和其中酸产生剂产生含氟基团的亚烷基亚胺酸的溶剂，并且提供了图案形成方法，包括将抗蚀剂材料施加到 基板，通过热处理后的光掩模进行曝光于波长为300nm以下的高能射线的工序，以及通过热处理后的显影液进行显影的工序。

    RESIST COMPOSITION AND PATTERNING PROCESS
    2.
    发明申请
    RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
    耐腐蚀组合物和方法

    公开(公告)号：US20120288796A1

    公开(公告)日：2012-11-15

    申请号：US13469929

    申请日：2012-05-11

    申请人： Kazuhiro KATAYAMA ,  Jun Hatakeyama ,  Youichi Ohsawa ,  Koji Hasegawa ,  Tomohiro Kobayashi

    发明人： Kazuhiro KATAYAMA ,  Jun Hatakeyama ,  Youichi Ohsawa ,  Koji Hasegawa ,  Tomohiro Kobayashi

    IPC分类号： G03F7/20 ,  G03F7/027

    CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325

    摘要： A resist composition is provided comprising a polymer comprising recurring units having a hydroxyl group substituted with an acid labile group, an onium salt PAG capable of generating a sulfonic acid, imide acid or methide acid, and an onium salt PAG capable of generating a carboxylic acid. A resist film of the composition is improved in dissolution contrast during organic solvent development, and from which a hole pattern having minimized nano-edge roughness can be formed via positive/negative reversal.

    摘要翻译： 提供了一种抗蚀剂组合物，其包含聚合物，其包含具有被酸不稳定基团取代的羟基的重复单元，能够产生磺酸的鎓盐PAG，酰亚胺酸或甲基化酸，以及能够产生羧酸的鎓盐PAG 。 组合物的抗蚀剂膜在有机溶剂显影期间的溶解对比度得到改善，并且可以通过正/负反转形成具有最小化的纳米边缘粗糙度的孔图案。

    Patterning process and resist composition
    4.
    发明授权
    Patterning process and resist composition 有权
    图案化过程和抗蚀剂组成

    公开(公告)号：US08507175B2

    公开(公告)日：2013-08-13

    申请号：US12905426

    申请日：2010-10-15

    申请人： Jun Hatakeyama ,  Masaki Ohashi ,  Youichi Ohsawa ,  Kazuhiro Katayama

    发明人： Jun Hatakeyama ,  Masaki Ohashi ,  Youichi Ohsawa ,  Kazuhiro Katayama

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/028

    CPC分类号： G03F7/0045 ,  G03F7/0397 ,  G03F7/095

    摘要： The process forms a pattern by applying a resist composition onto a substrate to form a resist film, baking, exposure, post-exposure baking, and development. The resist composition comprises a polymer comprising recurring units having an acid labile group and substantially insoluble in alkaline developer, a PAG, a PBG capable of generating an amino group, a quencher for neutralizing the acid from PAG for inactivation, and an organic solvent. A total amount of amino groups from the quencher and PBG is greater than an amount of acid from PAG. An unexposed region and an over-exposed region are not dissolved in developer whereas only an intermediate exposure dose region is dissolved in developer. Resolution is doubled by splitting a single line into two through single exposure and development.

    摘要翻译： 该方法通过将抗蚀剂组合物施加到基底上以形成抗蚀剂膜，烘烤，曝光，曝光后烘烤和显影来形成图案。 抗蚀剂组合物包含聚合物，其包含具有酸不稳定基团并且基本上不溶于碱性显影剂的重复单元，PAG，能够产生氨基的PBG，用于中和PAG酸失活的猝灭剂和有机溶剂。 来自猝灭剂和PBG的氨基的总量大于来自PAG的酸的量。 未曝光区域和过度曝光区域不溶解在显影剂中，而只有中间曝光剂量区域溶解在显影剂中。 通过单次曝光和开发将单线分成两组，分辨率翻了一番。

    Sulfonium salt-containing polymer, resist composition, and patterning process
    6.
    发明授权
    Sulfonium salt-containing polymer, resist composition, and patterning process 有权
    含锍盐的聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US08048610B2

    公开(公告)日：2011-11-01

    申请号：US12428933

    申请日：2009-04-23

    申请人： Youichi Ohsawa ,  Jun Hatakeyama ,  Seiichiro Tachibana ,  Takeshi Kinsho

    发明人： Youichi Ohsawa ,  Jun Hatakeyama ,  Seiichiro Tachibana ,  Takeshi Kinsho

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38 ,  G03F7/11

    CPC分类号： G03F7/0045 ,  C08F220/18 ,  C08F220/28 ,  C08F220/30 ,  C08F220/38 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/143 ,  Y10S430/167

    摘要： A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or C2F5, A is an optionally fluorine or oxygen-substituted divalent organic group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or may form a ring with the sulfur atom, N=0-2, R8 is H or alkyl, B is a single bond or optionally oxygen-substituted divalent organic group, a=0-3, b=1-3, and X is an acid labile group. The polymer generates a strong sulfonic acid which provides for effective cleavage of acid labile groups in a chemically amplified resist composition.

    摘要翻译： 提供了包含具有式（1），（2）和（3）的重复单元的聚合物以及包含其的化学放大抗蚀剂组合物。 R 1是H，F，CH 3或CF 3，R f是H，F，CF 3或C 2 F 5，A是任选氟或氧取代的二价有机基团，R 2，R 3和R 4是烷基，烯基，氧代烷基，芳基，芳烷基或芳氧基烷基 或者可以与硫原子形成环，N = O-2，R 8是H或烷基，B是单键或任选的氧取代的二价有机基团，a = 0-3，b = 1-3，和 X是酸不稳定组。 该聚合物产生强的磺酸，其提供化学增强抗蚀剂组合物中酸不稳定基团的有效切割。

    PATTERNING PROCESS AND RESIST COMPOSITION
    8.
    发明申请
    PATTERNING PROCESS AND RESIST COMPOSITION 有权
    绘图工艺和耐腐蚀组合物

    公开(公告)号：US20110033803A1

    公开(公告)日：2011-02-10

    申请号：US12849344

    申请日：2010-08-03

    申请人： Jun Hatakeyama ,  Kazuhiro Katayama ,  Youichi Ohsawa ,  Masaki Ohashi

    发明人： Jun Hatakeyama ,  Kazuhiro Katayama ,  Youichi Ohsawa ,  Masaki Ohashi

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/004 ,  G03F7/0035 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041

    摘要： A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.

    摘要翻译： 通过将包含含内含重复单元，含酸不稳定基团的重复单元和含氨基甲酸酯的重复单元的共聚物和光致酸产生剂的第一正性抗蚀剂组合物涂布在基材上以形成第一抗蚀剂膜，形成图案形成图案 曝光，PEB和显影以形成第一抗蚀剂图案，将第一抗蚀剂图案加热至酸失活，将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂布到第一抗蚀剂图案承载基底上 以形成第二抗蚀剂膜，图案曝光，PEB和显影以形成第二抗蚀剂图案。

    Thermal acid generator, resist undercoat material and patterning process
    9.
    发明授权
    Thermal acid generator, resist undercoat material and patterning process 有权
    热酸发生器，抗蚀底漆材料和图案化工艺

    公开(公告)号：US07514202B2

    公开(公告)日：2009-04-07

    申请号：US11797948

    申请日：2007-05-09

    申请人： Youichi Ohsawa ,  Takeru Watanabe ,  Jun Hatakeyama

    发明人： Youichi Ohsawa ,  Takeru Watanabe ,  Jun Hatakeyama

    IPC分类号： G03F7/004 ,  G03F7/30 ,  C07C309/06

    CPC分类号： G03F7/11 ,  G03F7/0045 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  Y10S430/122 ,  Y10S430/126

    摘要： A thermal acid generator of generating an acid on heating above 100° C. has formula: CF3CH(OCOR)CF2SO3−(R1)4N+ wherein R is alkyl or aryl, R1 is hydrogen, alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or R1 may bond together to form a ring with N. The sulfonic acid generated possesses an ester site within molecule so that less bulky acyl groups to bulky groups may be incorporated therein. The thermal acid generator provides a sufficient acid strength, is less volatile due to a high molecular weight, and ensures film formation. Upon disposal of used resist liquid, it may be converted into low accumulative compounds.

    摘要翻译： 一种在100℃以上加热生成酸的热酸发生剂具有式：CF 3 CH（OCOR）CF 2 SO 3 - （R 1）4 N +，其中R是烷基或芳基，R 1是氢，烷基，链烯基，氧代烷基，芳基，芳烷基或芳氧基烷基 ，或者R1可以键合在一起形成具有N的环。产生的磺酸在分子内具有酯位点，从而可以在其中引入较大体积的大体积基团的酰基。 热酸发生器提供足够的酸强度，由于高分子量而挥发性较低，并且确保成膜。 在处理使用过的抗蚀剂液体时，可以将其转化为低浓度的化合物。