发明授权
- 专利标题: Method of charged particle beam lithography and equipment for charged particle beam lithography
- 专利标题(中): 带电粒子束光刻方法及带电粒子束光刻设备
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申请号: US10958141申请日: 2004-10-05
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公开(公告)号: US07105842B2公开(公告)日: 2006-09-12
- 发明人: Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
- 申请人: Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation,Canon Kabushiki Kaisha
- 当前专利权人: Hitachi High-Technologies Corporation,Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo JP Tokyo
- 代理机构: Reed Smith LLP
- 代理商 Stanley P. Fisher, Esq.; Juan Carlos A. Marquez. Esq.
- 优先权: JP2003-348354 20031007
- 主分类号: H01J37/302
- IPC分类号: H01J37/302 ; G03F7/20
摘要:
Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.
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