Method of charged particle beam lithography and equipment for charged particle beam lithography
    1.
    发明申请
    Method of charged particle beam lithography and equipment for charged particle beam lithography 有权
    带电粒子束光刻方法及带电粒子束光刻设备

    公开(公告)号:US20050072941A1

    公开(公告)日:2005-04-07

    申请号:US10958141

    申请日:2004-10-05

    摘要: Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.

    摘要翻译: 本发明公开了即使由于某些多波束形成元件的故障而产生具有不良特性的电子束也能够进行曝光的带电粒子束光刻设备,而不更换故障多波束形成元件而不降低曝光精度。 该设备包括用于形成以预定间隔布置的多个带电粒子束的装置; 分别作用在多个带电粒子束上的多个阻挡器; 作用于所有多个带电粒子束的常见消隐器; 以及消隐限制,用于使得由多个消隐器给予预定偏转的那些带电粒子束到达样本,信号施加到公共消隐器,并且阻挡未被给予预定偏转的那些带电粒子束 通过多个消隐器到样品。 设备阻挡样品性能不良的光束,并仅使用具有不良特性的光束执行曝光。

    Method of charged particle beam lithography and equipment for charged particle beam lithography
    2.
    发明授权
    Method of charged particle beam lithography and equipment for charged particle beam lithography 有权
    带电粒子束光刻方法及带电粒子束光刻设备

    公开(公告)号:US07105842B2

    公开(公告)日:2006-09-12

    申请号:US10958141

    申请日:2004-10-05

    IPC分类号: H01J37/302 G03F7/20

    摘要: Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.

    摘要翻译: 本发明公开了即使由于某些多波束形成元件的故障而产生具有不良特性的电子束也能够进行曝光的带电粒子束光刻设备,而不更换故障多波束形成元件而不降低曝光精度。 该设备包括用于形成以预定间隔布置的多个带电粒子束的装置; 分别作用在多个带电粒子束上的多个阻挡器; 作用于所有多个带电粒子束的常见消隐器; 以及消隐限制,用于使得由多个消隐器给予预定偏转的那些带电粒子束到达样本,信号施加到公共消隐器,并且阻挡未被给予预定偏转的那些带电粒子束 通过多个消隐器到样品。 设备阻挡样品性能不良的光束,并仅使用具有不良特性的光束执行曝光。

    Electron beam writing equipment and electron beam writing method
    3.
    发明申请
    Electron beam writing equipment and electron beam writing method 有权
    电子束写入设备和电子束写入方法

    公开(公告)号:US20050072939A1

    公开(公告)日:2005-04-07

    申请号:US10957695

    申请日:2004-10-05

    摘要: The present invention provides a writing technique which can perform high-accuracy overlay writing in electron beam writing equipment performing mark detection by light. Electron beam writing equipment has an electron source; an electron optical system illuminating an electron beam emitted from the electron source onto a sample for scanning to form a desired pattern on the sample; a stage mounting the sample; a mark substrate provided on the stage; means beaming a light beam for position detection which is on the same side as the illumination direction of the electron beam for illuminating the mark substrate; light detection means which is on the same side as the means beaming a light beam for detecting reflected light reflected on the mark substrate; and electron detection means which is on the side opposite the light detection means with respect to the mark substrate for detecting a transmitted electron obtained by illumination of the electron beam onto the mark substrate, wherein relative position information of the light beam and the electron beam is obtained based on the signals of the detected reflected light and transmitted electron.

    摘要翻译: 本发明提供了一种写入技术,其能够通过光执行标记检测的电子束写入设备中执行高精度重叠写入。 电子束写入设备具有电子源; 电子光学系统将从电子源发射的电子束照射到样品上以进行扫描以在样品上形成所需图案; 安装样品的阶段; 设置在台上的标记基板; 意味着将用于位置检测的光束照射在与用于照射标记基板的电子束的照射方向相同的一侧; 光检测装置与发出用于检测在标记基板上反射的反射光的光束相同的一侧; 以及电子检测装置,其相对于用于检测通过将电子束照射到标记基板上而获得的透射电子的标记基板在与光检测装置相反的一侧,其中光束和电子束的相对位置信息为 基于检测到的反射光和透射电子的信号获得。

    Electron beam writing equipment and electron beam writing method
    4.
    发明授权
    Electron beam writing equipment and electron beam writing method 有权
    电子束写入设备和电子束写入方法

    公开(公告)号:US07098464B2

    公开(公告)日:2006-08-29

    申请号:US10957695

    申请日:2004-10-05

    IPC分类号: H01J37/304

    摘要: The present invention provides a writing technique which can perform high-accuracy overlay writing in electron beam writing equipment performing mark detection by light.Electron beam writing equipment has an electron source; an electron optical system illuminating an electron beam emitted from the electron source onto a sample for scanning to form a desired pattern on the sample; a stage mounting the sample; a mark substrate provided on the stage; means beaming a light beam for position detection which is on the same side as the illumination direction of the electron beam for illuminating the mark substrate; light detection means which is on the same side as the means beaming a light beam for detecting reflected light reflected on the mark substrate; and electron detection means which is on the side opposite the light detection means with respect to the mark substrate for detecting a transmitted electron obtained by illumination of the electron beam onto the mark substrate, wherein relative position information of the light beam and the electron beam is obtained based on the signals of the detected reflected light and transmitted electron.

    摘要翻译: 本发明提供了一种写入技术,其能够通过光执行标记检测的电子束写入设备中执行高精度重叠写入。 电子束写入设备具有电子源; 电子光学系统将从电子源发射的电子束照射到样品上以进行扫描以在样品上形成所需图案; 安装样品的阶段; 设置在台上的标记基板; 意味着将用于位置检测的光束照射在与用于照射标记基板的电子束的照射方向相同的一侧; 光检测装置与发出用于检测在标记基板上反射的反射光的光束相同的一侧; 以及电子检测装置,其相对于用于检测通过将电子束照射到标记基板上而获得的透射电子的标记基板在与光检测装置相反的一侧,其中光束和电子束的相对位置信息为 基于检测到的反射光和透射电子的信号获得。

    Electron beam writing system and electron beam writing method
    6.
    发明授权
    Electron beam writing system and electron beam writing method 失效
    电子束写入系统和电子束写入方法

    公开(公告)号:US07423274B2

    公开(公告)日:2008-09-09

    申请号:US11355952

    申请日:2006-02-17

    IPC分类号: A61N5/00

    摘要: An electron beam writing technology which enables highly accurate deflection correction of a minute field used in an electron beam writing system is provided. In this system, a function to move an electron beam by a deflection means through high-speed deflection scanning so as to repeat formation of a cyclic patterned electron beam and a function to move the patterned electron beam on cyclic correction marks by the deflection means through low-speed deflection scanning in synchronization with one cycle of the repetition are provided, and reflected electrons or secondary electrons emitted from the correction marks and the vicinity thereof or transmitted electrons transmitted through the correction marks in the low-speed deflection scanning are detected so as to correct the position or deflection amount of the electron beam based on the detection result.

    摘要翻译: 提供一种电子束写入技术,其能够对电子束写入系统中使用的微小场进行高精度的偏转校正。 在该系统中,通过偏转装置通过高速偏转扫描来移动电子束以便重复形成循环图案化电子束的功能,以及通过偏转装置通过偏转装置将图案化电子束移动到循环校正标记上的功能,通过 提供与重复的一个周期同步的低速偏转扫描,检测从校正标记及其附近发射的反射电子或二次电子或在低速偏转扫描中透过校正标记的透射电子,以便 基于检测结果校正电子束的位置或偏转量。

    Electron beam writing system and electron beam writing method
    7.
    发明申请
    Electron beam writing system and electron beam writing method 失效
    电子束写入系统和电子束写入方法

    公开(公告)号:US20060197453A1

    公开(公告)日:2006-09-07

    申请号:US11355952

    申请日:2006-02-17

    IPC分类号: H01K1/62

    摘要: An electron beam writing technology which enables highly accurate deflection correction of a minute field used in an electron beam writing system is provided. In this system, a function to move an electron beam by a deflection means through high-speed deflection scanning so as to repeat formation of a cyclic patterned electron beam and a function to move the patterned electron beam on cyclic correction marks by the deflection means through low-speed deflection scanning in synchronization with one cycle of the repetition are provided, and reflected electrons or secondary electrons emitted from the correction marks and the vicinity thereof or transmitted electrons transmitted through the correction marks in the low-speed deflection scanning are detected so as to correct the position or deflection amount of the electron beam based on the detection result.

    摘要翻译: 提供一种电子束写入技术,其能够对电子束写入系统中使用的微小场进行高精度的偏转校正。 在该系统中,通过偏转装置通过高速偏转扫描来移动电子束以便重复形成循环图案化电子束的功能,以及通过偏转装置通过偏转装置将图案化电子束移动到循环校正标记上的功能,通过 提供与重复的一个周期同步的低速偏转扫描,检测从校正标记及其附近发射的反射电子或二次电子或在低速偏转扫描中透过校正标记的透射电子,以便 基于检测结果校正电子束的位置或偏转量。

    Scanning electron microscope and calibration of image distortion
    10.
    发明授权
    Scanning electron microscope and calibration of image distortion 有权
    扫描电子显微镜和图像失真校准

    公开(公告)号:US07750296B2

    公开(公告)日:2010-07-06

    申请号:US11866426

    申请日:2007-10-03

    IPC分类号: G01J4/00 G01N23/00

    摘要: In method and apparatus for obtaining a scanning electron microscope image devoid of distortion by measuring a scanning distortion and calibrating the scanning distortion, there occurs a problem that an error takes place in dimension control owing to a scanning distortion of an electron beam. To cope with this problem, an image is obtained by scanning a predetermined region with the electron beam, a plurality of regions are selected from the image, the pattern pitch is measured in each of the regions and a scanning distortion amount is calculated from the result of measurement and then corrected.

    摘要翻译: 在通过测量扫描失真和校准扫描失真来获得没有失真的扫描电子显微镜图像的方法和装置中,存在由于电子束的扫描失真引起的尺寸控制中出现误差的问题。 为了解决这个问题,通过用电子束扫描预定区域来获得图像,从图像中选择多个区域,在每个区域中测量图案间距,并根据结果计算扫描失真量 的测量,然后校正。