Invention Grant
US07106629B2 Split-gate P-channel flash memory cell with programming by band-to-band hot electron method
有权
分频门P通道闪存单元，采用带对带热电子法进行编程
- Patent Title: Split-gate P-channel flash memory cell with programming by band-to-band hot electron method
- Patent Title (中): 分频门P通道闪存单元，采用带对带热电子法进行编程
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Application No.: US10788949Application Date: 2004-02-27
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Publication No.: US07106629B2Publication Date: 2006-09-12
- Inventor: Wen-Ting Chu , Chia-Ta Hsieh
- Applicant: Wen-Ting Chu , Chia-Ta Hsieh
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Tung & Associates
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A split-gate, P-channel flash memory cell having a band-to-band hot electron (BBHE) programming method is defined to improve the endurance characteristics of performance of the cell. The split-gate, P-channel structure, which includes a P+ drain, P+ source, floating gate and a control gate, advantageously improves protection from over-erase and hot-hole trap conditions, and improves programming speed and higher injection efficiency. The cell is erased by a polysilicon-polysilicon tunneling technique.
Public/Granted literature
- US20050190595A1 Split-gate P-channel flash memory cell with programming by band-to-band hot electron method Public/Granted day:2005-09-01
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