Invention Grant
US07108807B2 Methods for producing a dielectric, dielectric having self-generating pores, monomer for porous dielectrics, process for preparing poly-o-hydroxyamides, process for preparing polybenzoxazoles, and processes for producing an electronic component
有权
用于生产电介质的电介质，具有自发孔的电介质，用于多孔电介质的单体，制备聚邻羟基酰胺的方法，制备聚苯并恶唑的方法，以及用于制备电子部件的方法
- Patent Title: Methods for producing a dielectric, dielectric having self-generating pores, monomer for porous dielectrics, process for preparing poly-o-hydroxyamides, process for preparing polybenzoxazoles, and processes for producing an electronic component
- Patent Title (中): 用于生产电介质的电介质，具有自发孔的电介质，用于多孔电介质的单体，制备聚邻羟基酰胺的方法，制备聚苯并恶唑的方法，以及用于制备电子部件的方法
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Application No.: US10424376Application Date: 2003-04-28
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Publication No.: US07108807B2Publication Date: 2006-09-19
- Inventor: Recai Sezi , Andreas Walter , Klaus Lowack , Anna Maltenberger , Robert Banfic
- Applicant: Recai Sezi , Andreas Walter , Klaus Lowack , Anna Maltenberger , Robert Banfic
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agent Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
- Priority: DE10218788 20020426
- Main IPC: H01B3/30
- IPC: H01B3/30 ; C08G73/22
Abstract:
Poly-o-hydroxyamides include binaphthyl substituents as repeating units. The poly-o-hydroxyamides can be cyclized to give the polybenzoxazole by heating. Pore formation occurs, so that a dielectric having a very low dielectric constant k of less than 2.5 is obtained.
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