- 专利标题: Nonvolatile semiconductor memory
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申请号: US10812080申请日: 2004-03-30
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公开(公告)号: US07110320B2公开(公告)日: 2006-09-19
- 发明人: Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
- 申请人: Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP
- 优先权: JP4-177973 19920706
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the nonvolatile memory. The control device is enabled to receive external data and to apply the data to the nonvolatile memory, and the nonvolatile memory is enabled to operate a program operation including storing the received data to the buffer memory and storing the data held in the buffer memory to ones of nonvolatile memory cells. Moreover, the control device is enabled to receive external data while the nonvolatile memory is operating in the program operation. Also, the buffer memory is capable of receiving a unit of data, equal to the data length of data to be stored at one time of the program operation, the data length being more than 1 byte.
公开/授权文献
- US20040179407A1 Nonvolatile semiconductor memory 公开/授权日:2004-09-16