发明授权
US07112461B2 Fabrication process for integrated circuit having photodiode device
有权
具有光电二极管器件的集成电路的制造工艺
- 专利标题： Fabrication process for integrated circuit having photodiode device
- 专利标题（中）： 具有光电二极管器件的集成电路的制造工艺
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申请号： US10716249申请日： 2003-11-18
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公开(公告)号： US07112461B2公开(公告)日： 2006-09-26
- 发明人: Olivier Menut , Yvon Gris
- 申请人： Olivier Menut , Yvon Gris
- 申请人地址： FR Montrouge
- 专利权人： STMicroelectronics S.A.
- 当前专利权人： STMicroelectronics S.A.
- 当前专利权人地址： FR Montrouge
- 代理机构： Fleit, Kain, Gibbons, Gutman, Bongini & Bianco P.L.
- 代理商 Lisa K. Jorgenson; Stephen Bongini
- 优先权： FR0100420 20010112
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the junction. In a preferred embodiment, the substrate is formed from silicon, and the capacitive trench includes an internal doped silicon region partially enveloped by an insulating wall that laterally separates the internal region from the substrate. Also provided is a method for fabricating an integrated circuit including a substrate that incorporates a semiconductor photodiode device having a p-n junction.