发明授权
- 专利标题： Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
- 专利标题（中）： 集成电路中的应变通道晶体管和第二半导体元件的结构和方法
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申请号： US10729095申请日： 2003-12-05
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公开(公告)号： US07112495B2公开(公告)日： 2006-09-26
- 发明人: Chih-Hsin Ko , Wen-Chin Lee , Yee-Chia Yeo , Chun-Chieh Lin , Chenming Hu
- 申请人： Chih-Hsin Ko , Wen-Chin Lee , Yee-Chia Yeo , Chun-Chieh Lin , Chenming Hu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/76
摘要：
A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143.
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