Invention Grant
US07115165B2 Single crystal of nitride containing metal element of group III or IV and method for preparing the same
失效
含有III或IV族金属元素的氮化物单晶及其制备方法
- Patent Title: Single crystal of nitride containing metal element of group III or IV and method for preparing the same
- Patent Title (中): 含有III或IV族金属元素的氮化物单晶及其制备方法
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Application No.: US10398219Application Date: 2001-10-11
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Publication No.: US07115165B2Publication Date: 2006-10-03
- Inventor: Shoji Yamanaka , Xuean Chen
- Applicant: Shoji Yamanaka , Xuean Chen
- Applicant Address: JP Saitama
- Assignee: Japan Science and Technology Corporation
- Current Assignee: Japan Science and Technology Corporation
- Current Assignee Address: JP Saitama
- Agency: Armstrong, Kratz, Quintos, Hanson & Brooks, LLP
- Priority: JP2000-313480 20001013
- International Application: PCT/JP01/08925 WO 20011011
- International Announcement: WO02/34972 WO 20020502
- Main IPC: C30B9/02
- IPC: C30B9/02

Abstract:
β-ZrNCl polycrystalline powder prepared by chemical transport method and NH4Cl are mixed in a molar ratio of 1:2. The mixture is encapsulated in a Au capsule (6 mm in inner diameter and 6 mm in depth) of a reaction vessel 2, which is then enclosed in a highly heat-conductivitive sodium chloride block as an electrically insulating pressure medium 6. The mixture held in the sodium chloride block is placed in a carbon tube 8 for serving as a heater. In a cubic-pressing apparatus using a pyrophyllite 12 as a pressure-transmitting medium, the mixture is heated at 900° C. for 2 hours under an applied pressure of 3 GPa. After the mixture is allowed to stand until it is cooled down to room temperature, the Au capsule is taken out and light green β-ZrNCl single crystals are obtained. A large single crystal among them had a hexagonal plate-like habit and is transparent with dimensions about 2 mm in diameter, and 0.3 mm in thickness.
Public/Granted literature
- US20040040490A1 Single crystal of nitride containing metal element of group III or IV and method for preparing the same Public/Granted day:2004-03-04
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