发明授权
- 专利标题: Plasma processing device
- 专利标题(中): 等离子处理装置
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申请号: US10276673申请日: 2002-03-28
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公开(公告)号: US07115184B2公开(公告)日: 2006-10-03
- 发明人: Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
- 申请人: Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
- 申请人地址: JP JP
- 专利权人: Tadahiro Ohmi,Tokyo Electron Limited
- 当前专利权人: Tadahiro Ohmi,Tokyo Electron Limited
- 当前专利权人地址: JP JP
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- 优先权: JP2001-094272 20010328
- 国际申请: PCT/JP02/03108 WO 20020328
- 国际公布: WO02/080249 WO 20021010
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; C23C16/00
摘要:
A plasma processing apparatus includes a processing vessel, a means for holding a substrate to be processed, an evacuation system coupled to the processing vessel, a means for supplying plasma gas to an interior of the processing vessel, a microwave antenna provided on the processing vessel, and a process gas supply part comprised of two components. The first component includes a plurality of first apertures for passing through plasma formed in interior of the processing vessel, a process gas passage, and a plurality of second apertures in communication with the process gas passage. The second component includes a plurality of third apertures axially aligned with the first apertures in the first component and diffusion surfaces upon recessed areas of the second component, located opposite to the second apertures in the first component.
公开/授权文献
- US20030178144A1 Plasma processing device 公开/授权日:2003-09-25
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