发明授权
- 专利标题: Methods for electrically isolating portions of wafers
- 专利标题(中): 电隔离晶片部分的方法
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申请号: US10822413申请日: 2004-04-12
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公开(公告)号: US07115505B2公开(公告)日: 2006-10-03
- 发明人: Peter George Hartwell
- 申请人: Peter George Hartwell
- 申请人地址: US TX Houston
- 专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人地址: US TX Houston
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
Systems for electrically isolating portions of wafers are provided. A representative system includes a first wafer and a first conductor formed at least partially through the first wafer. A first conductor insulating layer is formed at least partially through the first wafer. The first conductor insulating layer engages the first conductor and is disposed between the first conductor and material of the first wafer. A first outer insulating layer also is provided that is formed at least partially through the first wafer. The first outer insulating layer is spaced from the first conductor insulating layer. Both the first conductor insulating layer and the first outer insulating layer are formed of dielectric material. Methods also are provided.
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