Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped

发明授权

US07115996B2 Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped 有权

请登陆查看更多内容

专利标题： Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped
申请号： US10852142

申请日： 2004-05-25
公开(公告)号： US07115996B2

公开(公告)日： 2006-10-03
发明人: Daniel C. Edelstein , Sung Kwon Kang , Maurice McGlashan-Powell , Eugene J. O'Sullivan , George F. Walker
申请人： Daniel C. Edelstein , Sung Kwon Kang , Maurice McGlashan-Powell , Eugene J. O'Sullivan , George F. Walker
申请人地址： US NY Armonk
专利权人： International Business Machines Corporation
当前专利权人： International Business Machines Corporation
当前专利权人地址： US NY Armonk
代理机构： Connolly Bove Lodge & Hutz, LLP
代理商 Robert Trepp, Esq.
主分类号： H01L23/48
IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40

Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped

摘要：

A method to selectively cap interconnects with indium or tin bronzes and copper oxides thereof is provided. The invention also provides the interconnect and copper surfaces so formed.

公开/授权文献

US20040212089A1 Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped 公开/授权日：2004-10-28

信息查询

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/48	.用于向或自处于工作中的固态物体通电的装置，例如引线或接线端装置