- 专利标题: Semiconductor device
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申请号: US10890281申请日: 2004-07-14
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公开(公告)号: US07116175B2公开(公告)日: 2006-10-03
- 发明人: Toshihiko Shimizu , Yoshikuni Matsunaga , Yuri Kusakari
- 申请人: Toshihiko Shimizu , Yoshikuni Matsunaga , Yuri Kusakari
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Reed Smith LLP
- 代理商 Stanley P. Fisher, Esq.; Juan Carlos A. Marquez, Esq.
- 优先权: JP2003-290136 20030808
- 主分类号: H03F3/14
- IPC分类号: H03F3/14
摘要:
Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.
公开/授权文献
- US20050030107A1 Semiconductor device 公开/授权日:2005-02-10
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