Invention Grant
US07116462B2 Electrostatic drive type MEMS device and manufacturing method thereof, optical MEMS device, light modulation device, GLV device, and laser display 失效
静电驱动型MEMS器件及其制造方法,光学MEMS器件,光调制器件,GLV器件和激光显示器

  • Patent Title: Electrostatic drive type MEMS device and manufacturing method thereof, optical MEMS device, light modulation device, GLV device, and laser display
  • Patent Title (中): 静电驱动型MEMS器件及其制造方法,光学MEMS器件,光调制器件,GLV器件和激光显示器
  • Application No.: US10468873
    Application Date: 2002-12-16
  • Publication No.: US07116462B2
    Publication Date: 2006-10-03
  • Inventor: Koichi Ikeda
  • Applicant: Koichi Ikeda
  • Applicant Address: JP
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP
  • Agency: Rader, Fishman & Grauer PLLC
  • Agent Ronald P. Kananen
  • Priority: JP2001-394880 20011226
  • International Application: PCT/JP02/13127 WO 20021216
  • International Announcement: WO03/055788 WO 20030710
  • Main IPC: G02B26/00
  • IPC: G02B26/00
Electrostatic drive type MEMS device and manufacturing method thereof, optical MEMS device, light modulation device, GLV device, and laser display
Abstract:
An electrostatic drive type MEMS device and a manufacturing method thereof are provided, in which flattening the surface of a driving side electrode, improving performance, and furthering the improvements of the degree of freedom of designing in the manufacturing process are implemented. In addition, a GLV device using this MEMS device is provided, and further a laser display using this GLV device is also provided. The electrostatic drive type MEMS device includes a substrate side electrode and a beam having a driving side electrode driven by electrostatic attraction force or electrostatic repulsion force that acts between the substrate side electrode and driving side electrode, in which the substrate side electrode is formed of an impurities-doped conductive semiconductor region in a semiconductor substrate.
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