Invention Grant
- Patent Title: Nonvolatile semiconductor memory and method of operating the same
- Patent Title (中): 非易失性半导体存储器及其操作方法
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Application No.: US11199263Application Date: 2005-08-09
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Publication No.: US07116582B2Publication Date: 2006-10-03
- Inventor: Satoshi Torii
- Applicant: Satoshi Torii
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP.
- Priority: JP2002-206904 20020716
- Main IPC: G11C16/06
- IPC: G11C16/06

Abstract:
A first decision process, which reads data from a memory cell under a first deciding condition to decide pass/fail and applies a signal to the memory cell to change an amount of charge stored in the memory cell if the data is decided as fail, and a second decision process, which reads the data from the memory cell under a second deciding condition that is relaxed rather than the first deciding condition to decide the pass/fail, are executed, and then the processes are repeated from the first decision process when the data is decided as fail in the second decision process.
Public/Granted literature
- US20050270878A1 Nonvolatile semiconductor memory and method of operating the same Public/Granted day:2005-12-08
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