发明授权
- 专利标题: Method and apparatus for inspecting a semiconductor device
- 专利标题(中): 用于检查半导体器件的方法和装置
-
申请号: US11235136申请日: 2005-09-27
-
公开(公告)号: US07116817B2公开(公告)日: 2006-10-03
- 发明人: Maki Tanaka , Masahiro Watanabe , Kenji Watanabe , Mari Nozoe , Hiroshi Miyai
- 申请人: Maki Tanaka , Masahiro Watanabe , Kenji Watanabe , Mari Nozoe , Hiroshi Miyai
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout and Kraus, LLP.
- 优先权: JP2001-185773 20010620
- 主分类号: G06K9/00
- IPC分类号: G06K9/00
摘要:
A method and apparatus for inspecting a wafer in which a focused charged particle beam is irradiated onto a surface of a wafer on which patterns are formed through a semiconductor device fabrication process, a secondary charged particle image of a desired area of the wafer is obtained by detecting secondary charged particles emitted from the surface of the wafer, and information about image feature amount of each pattern within the desired area from the obtained secondary charged particle beam image. The information about image feature amount is compared with a preset value, and on the basis of a result of the comparison, a quality of patterns which have been formed around the desired area is estimated, and information of a result of the estimation is outputted.
公开/授权文献
信息查询