According to one embodiment of the present invention, a method of forming a semiconductor device includes forming a gate stack on an outer surface of a semiconductor body. First and second sidewall bodies are formed on opposing sides of the gate stack. A first recess is formed in an outer surface of the gate stack, and a first dopant is implanted into the gate stack after the first recess is formed. The first dopant diffuses inwardly from the outer surface of the gate stack that defines the first recess. The first dopant diffuses toward an interface between the gate stack and the semiconductor body. The first recess increases the concentration of the first dopant at the interface.