发明授权
- 专利标题： Production method of semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US11097137申请日： 2005-04-04
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公开(公告)号： US07119007B2公开(公告)日： 2006-10-10
- 发明人: Ryuichi Kanamura
- 申请人： Ryuichi Kanamura
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Rader, Fishman & Grauer PLLC
- 代理商 Ronald P. Kananen
- 优先权： JPP2002-210467 20020719
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
The method includes forming on an underlayer wiring a first insulating film, a second insulating, and first mask forming layer; forming a first resist mask having an inverted pattern of wiring Wenches for the upper wiring; etching the first mask forming layer through the first resist mask, thereby forming in the first mask forming layer a concave part conforming to the inverted pattern of wiring tenches for the upper wiring, forming on the first mask forming layer a second mask forming layer, thereby filling the concave part with the second mask forming layer; selectively removing the second mask forming layer on the region in which the wiring trench is formed, thereby forming the second mask having the wiring trench pattern; forming on the first mask forming layer a second resist mask having an opening pattern of the via holes; etching the first mask forming layer and the second insulating film through the second resist mask, thereby forming the via holes.
公开/授权文献
- US20050170636A1 Production method of semiconductor device 公开/授权日：2005-08-04
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