发明授权
- 专利标题： Light emitting diode and method for manufacturing the same
- 专利标题（中）： 发光二极管及其制造方法
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申请号： US11012331申请日： 2004-12-16
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公开(公告)号： US07119375B2公开(公告)日： 2006-10-10
- 发明人: Doo Go Baik , Bang Won Oh , Hak Kyu Kim
- 申请人： Doo Go Baik , Bang Won Oh , Hak Kyu Kim
- 申请人地址： KR Kyungki-Do
- 专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址： KR Kyungki-Do
- 代理机构： Lowe Hauptman & Berner, LLP.
- 优先权： KR2002-78456 20021210
- 主分类号： H01L29/22
- IPC分类号： H01L29/22
摘要：
A light emitting diode (LED) includes a substrate, a first conductive clad layer formed on the substrate, an active layer formed on the first conductive clad layer, a second conductive clad layer formed on the active layer, an alumina (Al2O3) layer formed on the lower surface of the substrate, and an aluminum layer formed on the lower surface of the alumina (Al2O3) layer. The substrate may be removed, and the aluminum layer and the alumina layer are formed directly on the lower surface of the first conductive clad layer.