Invention Grant
- Patent Title: Surface acoustic wave device
- Patent Title (中): 表面声波装置
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Application No.: US10836201Application Date: 2004-05-03
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Publication No.: US07122938B2Publication Date: 2006-10-17
- Inventor: Hitoshi Noguchi , Yoshihiro Kubota
- Applicant: Hitoshi Noguchi , Yoshihiro Kubota
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., LTD
- Current Assignee: Shin-Etsu Chemical Co., LTD
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2003-132575 20030512
- Main IPC: H03H9/25
- IPC: H03H9/25

Abstract:
There is disclosed a surface acoustic wave device having at least a diamond film, a piezoelectric-material film, and an electrode on a base material wherein all or some part of the diamond film consists of an electroconductive diamond in which a dopant is doped. Thereby, there can be provided a surface acoustic wave device wherein breakage of the substrate due to generation of static electricity can be prevented in a device manufacturing process so that the device manufacture yield can be increased, and electrification can be prevented at the time of real use so that high performance can be maintained for a long time, even if it is a surface acoustic wave device using diamond.
Public/Granted literature
- US20050001512A1 Surface acoustic wave device Public/Granted day:2005-01-06
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