Invention Grant
- Patent Title: Reflective semiconductor optical amplifier light source
- Patent Title (中): 反光半导体光放大器光源
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Application No.: US10867035Application Date: 2004-06-14
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Publication No.: US07123406B2Publication Date: 2006-10-17
- Inventor: Dong-Jae Shin , Jeong-Seok Lee , Seung-Woo Kim , Seong-Taek Hwang
- Applicant: Dong-Jae Shin , Jeong-Seok Lee , Seung-Woo Kim , Seong-Taek Hwang
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co Ltd.
- Current Assignee: Samsung Electronics Co Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: Cha & Reiter, LLC
- Priority: KR10-2003-0081474 20031118
- Main IPC: H10S5/50
- IPC: H10S5/50

Abstract:
A reflective semiconductor optical amplifier light source is disclosed. The reflective semiconductor optical amplifier light source includes a transmissive type semiconductor optical amplifier for creating and amplifying spontaneous emission light, a reflector for reflecting amplified spontaneous emission light outputted from the semiconductor optical amplifier such that amplified spontaneous emission light is reflected back into the semiconductor optical amplifier, and a bandpass filter having a predetermined wavelength band width for limiting wavelength bands of the amplified spontaneous emission light capable of passing through the bandpass filter. In one aspect of the invention, the bandpass filter is interposed between the semiconductor optical amplifier and the reflector. In another aspect, a polarization filter is imposed to limit the reflected emission light to a predetermined polarization.
Public/Granted literature
- US20050105171A1 Reflective semiconductor optical amplifier light source Public/Granted day:2005-05-19
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