- 专利标题: Semiconductor light emitting device and its manufacturing method
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申请号: US10930009申请日: 2004-08-30
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公开(公告)号: US07125732B2公开(公告)日: 2006-10-24
- 发明人: Motonobu Takeya , Takeharu Asano , Masao Ikeda
- 申请人: Motonobu Takeya , Takeharu Asano , Masao Ikeda
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Sonnenscheinanath & Rosenthal LLP
- 优先权: JPP2002-016084 20020124; JPP2002-261410 20020906
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer. The first layer 9 is not thinner than 50 nm. The p-type second layer 12 includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.