- 专利标题： Out of the box vertical transistor for eDRAM on SOI
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申请号： US11298800申请日： 2005-12-09
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公开(公告)号： US07129130B2公开(公告)日： 2006-10-31
- 发明人: James W. Adkisson , Gary B. Bronner , Dureseti Chidambarrao , Ramachandra Divakaruni , Carl J. Radens
- 申请人： James W. Adkisson , Gary B. Bronner , Dureseti Chidambarrao , Ramachandra Divakaruni , Carl J. Radens
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L2/20
摘要：
The present invention provides a vertical memory device formed in a silicon-on-insulator substrate, where a bitline contacting the upper surface of the silicon-on-insulator substrate is electrically connected to the vertical memory device through an upper strap diffusion region formed through a buried oxide layer. The upper strap diffusion region is formed by laterally etching a portion of the buried oxide region to produce a divot, in which doped polysilicon is deposited. The upper strap region diffusion region also provides the source for the vertical transistor of the vertical memory device. The vertical memory device may also be integrated with a support region having logic devices formed atop the silicon-on-insulator substrate.
公开/授权文献
- US20060091442A1 Out of the box vertical transistor for eDRAM on SOI 公开/授权日：2006-05-04
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