Invention Grant
- Patent Title: Planarizing method employing hydrogenated silicon nitride planarizing stop layer
- Patent Title (中): 采用氢化氮化硅平面化停止层的平面化方法
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Application No.: US10701802Application Date: 2003-11-04
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Publication No.: US07129151B2Publication Date: 2006-10-31
- Inventor: Ping Chuang , Henry Lo , Mei Shang Zhou
- Applicant: Ping Chuang , Henry Lo , Mei Shang Zhou
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Tung & Associates
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A planarizing method for forming a patterned planarized aperture fill layer within an aperture employs a planarizing stop layer formed of a reductant based material, such as but not limited to a hydrogenated silicon nitride material. The reductant based material provides the planarizing stop layer with enhanced planarizing stop properties. The method is particularly useful within the context of CMP planarizing methods.
Public/Granted literature
- US20050095864A1 Planarizing method employing hydrogenated silicon nitride planarizing stop layer Public/Granted day:2005-05-05
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