Invention Grant
- Patent Title: Electron emitting method of electron emitter
- Patent Title (中): 电子发射体的电子发射方法
-
Application No.: US10459386Application Date: 2003-06-11
-
Publication No.: US07129642B2Publication Date: 2006-10-31
- Inventor: Yukihisa Takeuchi , Tsutomu Nanataki , Iwao Ohwada
- Applicant: Yukihisa Takeuchi , Tsutomu Nanataki , Iwao Ohwada
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown
- Priority: JP2002-348916 20021129; JP2003-155674 20030530
- Main IPC: H01J11/04
- IPC: H01J11/04

Abstract:
An electron emitter has an emitter section formed on a substrate, and a cathode electrode and an anode electrode formed on a same surface of the emitter section. A slit is formed between the cathode electrode and the anode electrode. A drive voltage from a pulse generation source is applied between the cathode electrode and the anode electrode, and the anode electrode is connected to the ground. A collector electrode is provided above the emitter section at a position facing the slit. The collector electrode is connected to a bias voltage source through a resistor. The emitter section is made of a piezoelectric material.
Public/Granted literature
- US20040104689A1 Electron emitting method of electron emitter Public/Granted day:2004-06-03
Information query