- 专利标题: Thin film transistor array substrate for a liquid crystal display and the method for fabricating the same
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申请号: US11126305申请日: 2005-05-11
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公开(公告)号: US07130003B2公开(公告)日: 2006-10-31
- 发明人: Woon-Yong Park , Hyeon-Hwan Kim , Dong-Hyeon Ki
- 申请人: Woon-Yong Park , Hyeon-Hwan Kim , Dong-Hyeon Ki
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: MacPherson Kwok Chen & Heid LLP
- 优先权: KR2000-6273 20000210; KR2000-21693 20000424
- 主分类号: G02F1/1333
- IPC分类号: G02F1/1333 ; G02F1/1343 ; H01L21/00
摘要:
A method for fabricating a thin film array substrate for a liquid crystal display includes steps of forming a gate line assembly and a common electrode line assembly on a first substrate. The gate line assembly includes a plurality of gate lines and gate pads, and the common electrode line assembly includes common signal lines and common electrodes. Thereafter, a gate insulating layer is formed on the first substrate, and a semiconductor pattern and an ohmic contact pattern are formed on the gate insulating layer. A data line assembly and pixel electrodes are then formed on the first substrate. The data line assembly includes a plurality of data lines, data pads, and source and drain electrodes. The pixel electrodes are connected to the drain electrodes while proceeding parallel to the common electrodes. A passivation layer is formed on the substrate. The passivation layer and the gate insulating layer are etched such that the gate pads and the data pads are exposed to the outside. At this time, the etching is performed after an assembly process where a second substrate is arranged to face the first substrate and assembled together and the passivation layer and the gate insulating layer are exposed outside of the second substrate.
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