发明授权
- 专利标题： Electrooptic Q-switch element made of crystal
- 专利标题（中）： 电光Q开关元件由晶体制成
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申请号： US10441404申请日： 2003-05-20
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公开(公告)号： US07130318B2公开(公告)日： 2006-10-31
- 发明人: Jiyang Wang , Xin Yin , Shaojun Zhang , Xiaobo Hu , Huaijin Zhang , Minhua Jiang
- 申请人： Jiyang Wang , Xin Yin , Shaojun Zhang , Xiaobo Hu , Huaijin Zhang , Minhua Jiang
- 申请人地址： CN Shandong Province
- 专利权人： Shandong University
- 当前专利权人： Shandong University
- 当前专利权人地址： CN Shandong Province
- 代理机构： Alston & Bird LLP
- 优先权： CN02110374 20020520
- 主分类号： H01S3/11
- IPC分类号： H01S3/11 ; H01S3/115
摘要：
This invention is a kind of electrooptic Q-switch element made of a single crystal and belongs to the application of crystal in electrooptic technology field. The invention consists of electrooptic Q-switch which is made of La3Ga5SiO14 or Nd:La3Ga5SiO14 or the other related crystal materials such as La3Ga5-xAlxSiO14, Sr3Ga2Ge4SiO14, Na2CaGe6O14, Ca3Ga2Ge4O14, La3Ga5.5Nb0.5O14 and La3Ga5.5Ta0.5O14 with the common shape or a specific shape containing Brewster angle as shown in figure. This kind of electrooptic Q-switch can be used in YAG laser and other laser. It overcomes the shortages of the commercial Q-switches, such as the high, un-adjustable, low stable half-wave voltage and great half-wave voltage variation with temperature. The advantage of this kind of electrooptic Q-switch is its low, adjustable, high stable half-wave voltage.
公开/授权文献
- US20030214983A1 Electrooptic Q-switch element made of crystal 公开/授权日：2003-11-20
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