A method of fabricating a semiconductor memory device, comprising recess-etching a major surface of a semiconductor substrate, thereby forming a pillar that becomes a device formation region; burying an insulation film in the recess-etched region, thereby forming a device isolation region; burying a first oxide film at a side wall of the pillar on the device isolation region; forming a second oxide film on an upper part of the pillar; and removing an upper part of the first oxide film using the second oxide film as a mask, thereby exposing an upper surface and an upper part of the side wall of the pillar; and the method, comprising forming a conductive material on the exposed upper surface and the exposed upper part of the side wall of the pillar, thereby forming a surface strap that electrically connects the capacitor and the second activation region.