发明授权
- 专利标题： Damascene process capable of avoiding via resist poisoning
- 专利标题（中）： 大马士革过程能够避免通过抗蚀剂中毒
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申请号： US10709278申请日： 2004-04-26
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公开(公告)号： US07135400B2公开(公告)日： 2006-11-14
- 发明人: Wen-Liang Lien , Charlie C J Lee , Chih-Ning Wu , Jain-Hon Chen
- 申请人： Wen-Liang Lien , Charlie C J Lee , Chih-Ning Wu , Jain-Hon Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method for avoiding resist poisoning during a damascene process is disclosed. A semiconductor substrate is provided with a low-k dielectric layer (k≦2.9) thereon, a SiC layer over the low-k dielectric layer, and a blocking layer over the SiC layer. The blocking layer is used to prevent unpolymerized precursors diffused out from the low-k dielectric layer from contacting an overlying resist. A bottom anti-reflection coating (BARC) layer is formed on the blocking layer. A resist layer is formed on the BARC layer, the resist layer having an opening to expose a portion of the BARC layer. A damascene structure is formed in the low-k dielectric layer by etching the BARC layer, the blocking layer, the SiC layer, and the low-k dielectric layer through the opening.
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