发明授权
US07138297B2 Method of dividing a semiconductor wafer utilizing a laser dicing technique
有权
利用激光切割技术分割半导体晶片的方法
- 专利标题： Method of dividing a semiconductor wafer utilizing a laser dicing technique
- 专利标题（中）： 利用激光切割技术分割半导体晶片的方法
-
申请号： US10918412申请日： 2004-08-16
-
公开(公告)号： US07138297B2公开(公告)日： 2006-11-21
- 发明人: Toshitsune Iijima , Ninao Sato
- 申请人： Toshitsune Iijima , Ninao Sato
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2003-006387 20030114
- 主分类号： H01L21/48
- IPC分类号： H01L21/48 ; H01L23/544
摘要：
A semiconductor chip is formed by dividing a semiconductor wafer by use of the laser dicing technique. The semiconductor chip has a laser dicing region on the side surface thereof. A dummy wiring layer is formed along the laser dicing region on the surface layer of the laser dicing region. A laser beam is applied to the dummy wiring layer to divide the semiconductor wafer.
公开/授权文献
信息查询
IPC分类:
