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    Semiconductor wafer dividing apparatus and semiconductor device manufacturing method
    4.
    发明申请
    Semiconductor wafer dividing apparatus and semiconductor device manufacturing method 审中-公开
    半导体晶片分割装置及半导体装置的制造方法

    公开(公告)号：US20050023260A1

    公开(公告)日：2005-02-03

    申请号：US10846673

    申请日：2004-05-17

    申请人： Shinya Takyu ,  Tetsuya Kurosawa ,  Ninao Sato

    发明人： Shinya Takyu ,  Tetsuya Kurosawa ,  Ninao Sato

    IPC分类号： B23K26/38 ,  B23K26/40 ,  B28D5/00 ,  H01L21/00 ,  B23K26/14

    CPC分类号： H01L21/67092 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011

    摘要： A semiconductor device manufacturing apparatus includes etching equipment, damage forming equipment, dividing equipment and removing equipment. The etching equipment etches a film formed on an element forming surface of a semiconductor wafer, thereby defining a dicing line or a chip-dividing line. The damage forming equipment forms damage layers used as starting points to divide a semiconductor wafer into discrete semiconductor chips on a rear surface side of the semiconductor wafer which is opposite to an element forming surface. The dividing equipment divides the semiconductor wafer into discrete semiconductor chips with the damage layers used as the starting points. The removing equipment removes a rear surface portion of the semiconductor wafer to at least a depth where the damage layers are no more present.

    摘要翻译： 半导体器件制造装置包括蚀刻设备，损坏形成设备，分割设备和移除设备。 蚀刻设备蚀刻形成在半导体晶片的元件形成表面上的膜，从而限定切割线或切屑分割线。 损伤形成设备形成用作起点的损伤层，以将半导体晶片分成与元件形成表面相对的半导体晶片的背面侧上的分立半导体芯片。 分割设备将半导体晶片分为分立半导体芯片，其中损伤层用作起点。 去除设备将半导体晶片的后表面部分移至至少不存在损伤层的深度。

    Semiconductor wafer dividing method and apparatus
    8.
    发明授权
    Semiconductor wafer dividing method and apparatus 失效
    半导体晶圆分割方法及装置

    公开(公告)号：US07135384B2

    公开(公告)日：2006-11-14

    申请号：US10787207

    申请日：2004-02-27

    申请人： Shinya Takyu ,  Ninao Sato

    发明人： Shinya Takyu ,  Ninao Sato

    IPC分类号： H01L21/46

    CPC分类号： H01L21/78

    摘要： A semiconductor element is formed in a semiconductor wafer, and a groove is formed by performing half-cut dicing on the semiconductor wafer along a dicing line. A dicing region of the semiconductor wafer is irradiated with a laser beam to melt or vaporize a cutting streak formed by dicing. An adhesive tape is adhered to the semiconductor element formation surface of the semiconductor wafer, and the other side of the semiconductor element formation surface is ground to at least a depth reaching the groove.

    摘要翻译： 在半导体晶片中形成半导体元件，并且通过沿着切割线在半导体晶片上进行半切割切割形成凹槽。 用激光束照射半导体晶片的切割区域，以熔化或蒸发由切割形成的切割条纹。 将粘合带粘附到半导体晶片的半导体元件形成表面，并且将半导体元件形成表面的另一侧研磨到至少到达凹槽的深度。

    Semiconductor wafer dividing apparatus and semiconductor device manufacturing method
    9.
    发明授权
    Semiconductor wafer dividing apparatus and semiconductor device manufacturing method 有权
    半导体晶片分割装置及半导体装置的制造方法

    公开(公告)号：US06756562B1

    公开(公告)日：2004-06-29

    申请号：US10390900

    申请日：2003-03-19

    申请人： Tetsuya Kurosawa ,  Shinya Takyu ,  Ninao Sato

    发明人： Tetsuya Kurosawa ,  Shinya Takyu ,  Ninao Sato

    IPC分类号： B23K2638

    CPC分类号： H01L21/6835 ,  B23K26/40 ,  B23K26/703 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/67092 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834

    摘要： A semiconductor device manufacturing apparatus includes a damage forming equipment, dividing equipment and removing equipment. The damage forming equipment forms damage layers used as starting points to divide a semiconductor wafer into discrete semiconductor chips on a rear surface side of the semiconductor wafer which is opposite to an element forming surface. The dividing equipment divides the semiconductor wafer into discrete semiconductor chips with the damage layers used as the starting points. The removing equipment removes a rear surface portion of the semiconductor wafer to at least a depth where the damage layers are no more present.

    摘要翻译： 半导体器件制造装置包括损伤形成设备，分割设备和去除设备。 损伤形成设备形成用作起点的损伤层，以将半导体晶片分成与元件形成表面相对的半导体晶片的背面侧上的分立半导体芯片。 分割设备将半导体晶片分为分立半导体芯片，其中损伤层用作起点。 去除设备将半导体晶片的后表面部分移至至少不存在损伤层的深度。