发明授权
US07141459B2 Silicon-on-insulator ULSI devices with multiple silicon film thicknesses
有权
具有多个硅膜厚度的绝缘体上硅ULSI器件
- 专利标题： Silicon-on-insulator ULSI devices with multiple silicon film thicknesses
- 专利标题（中）： 具有多个硅膜厚度的绝缘体上硅ULSI器件
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申请号： US10388297申请日： 2003-03-12
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公开(公告)号： US07141459B2公开(公告)日： 2006-11-28
- 发明人: Fu-Liang Yang , Hao-Yu Chen , Yee-Chia Yeo , Carlos H. Diaz , Chenming Hu
- 申请人： Fu-Liang Yang , Hao-Yu Chen , Yee-Chia Yeo , Carlos H. Diaz , Chenming Hu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/00 ; H01L21/36 ; H01L21/8238
摘要：
A method of forming a multiple-thickness semiconductor-on-insulator, comprising the following steps. A wafer is provided comprising a semiconductor film (having at least two regions) overlying a buried insulator layer overlying a substrate. The semiconductor film within one of the at least two regions is masked to provide at least one semiconductor film masked portion having a first thickness, leaving exposed the semiconductor film within at least one of the at least two regions to provide at least one semiconductor film exposed portion having the first thickness. In one embodiment, at least a portion of the at least one exposed semiconductor film portion is oxidized to provide at least one partially oxidized, exposed semiconductor film portion. Then the oxidized portion of the exposed semiconductor film is removed to leave a portion of the semiconductor film having a second thickness less than the first thickness.
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